---
_id: '23613'
author:
- first_name: Baolin
full_name: Zhao, Baolin
last_name: Zhao
- first_name: Bastian
full_name: Gothe, Bastian
last_name: Gothe
- first_name: Arthur
full_name: Groh, Arthur
last_name: Groh
- first_name: Thomas
full_name: Schmaltz, Thomas
last_name: Schmaltz
- first_name: Johannes
full_name: Will, Johannes
last_name: Will
- first_name: Hans-Georg
full_name: Steinrück, Hans-Georg
id: '84268'
last_name: Steinrück
orcid: 0000-0001-6373-0877
- first_name: Tobias
full_name: Unruh, Tobias
last_name: Unruh
- first_name: Stefan
full_name: Mecking, Stefan
last_name: Mecking
- first_name: Marcus
full_name: Halik, Marcus
last_name: Halik
citation:
ama: Zhao B, Gothe B, Groh A, et al. Oligothiophene Phosphonic Acids for Self-Assembled
Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces.
2021;13:32461-32466. doi:10.1021/acsami.1c05764
apa: Zhao, B., Gothe, B., Groh, A., Schmaltz, T., Will, J., Steinrück, H.-G., Unruh,
T., Mecking, S., & Halik, M. (2021). Oligothiophene Phosphonic Acids for Self-Assembled
Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces,
13, 32461–32466. https://doi.org/10.1021/acsami.1c05764
bibtex: '@article{Zhao_Gothe_Groh_Schmaltz_Will_Steinrück_Unruh_Mecking_Halik_2021,
title={Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect
Transistors}, volume={13}, DOI={10.1021/acsami.1c05764},
journal={ACS Applied Materials & Interfaces}, author={Zhao, Baolin and Gothe,
Bastian and Groh, Arthur and Schmaltz, Thomas and Will, Johannes and Steinrück,
Hans-Georg and Unruh, Tobias and Mecking, Stefan and Halik, Marcus}, year={2021},
pages={32461–32466} }'
chicago: 'Zhao, Baolin, Bastian Gothe, Arthur Groh, Thomas Schmaltz, Johannes Will,
Hans-Georg Steinrück, Tobias Unruh, Stefan Mecking, and Marcus Halik. “Oligothiophene
Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors.” ACS
Applied Materials & Interfaces 13 (2021): 32461–66. https://doi.org/10.1021/acsami.1c05764.'
ieee: 'B. Zhao et al., “Oligothiophene Phosphonic Acids for Self-Assembled
Monolayer Field-Effect Transistors,” ACS Applied Materials & Interfaces,
vol. 13, pp. 32461–32466, 2021, doi: 10.1021/acsami.1c05764.'
mla: Zhao, Baolin, et al. “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer
Field-Effect Transistors.” ACS Applied Materials & Interfaces, vol.
13, 2021, pp. 32461–66, doi:10.1021/acsami.1c05764.
short: B. Zhao, B. Gothe, A. Groh, T. Schmaltz, J. Will, H.-G. Steinrück, T. Unruh,
S. Mecking, M. Halik, ACS Applied Materials & Interfaces 13 (2021) 32461–32466.
date_created: 2021-09-01T09:09:36Z
date_updated: 2022-01-06T06:55:57Z
department:
- _id: '633'
doi: 10.1021/acsami.1c05764
intvolume: ' 13'
language:
- iso: eng
page: 32461-32466
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors
type: journal_article
user_id: '84268'
volume: 13
year: '2021'
...