--- _id: '23613' author: - first_name: Baolin full_name: Zhao, Baolin last_name: Zhao - first_name: Bastian full_name: Gothe, Bastian last_name: Gothe - first_name: Arthur full_name: Groh, Arthur last_name: Groh - first_name: Thomas full_name: Schmaltz, Thomas last_name: Schmaltz - first_name: Johannes full_name: Will, Johannes last_name: Will - first_name: Hans-Georg full_name: Steinrück, Hans-Georg id: '84268' last_name: Steinrück orcid: 0000-0001-6373-0877 - first_name: Tobias full_name: Unruh, Tobias last_name: Unruh - first_name: Stefan full_name: Mecking, Stefan last_name: Mecking - first_name: Marcus full_name: Halik, Marcus last_name: Halik citation: ama: Zhao B, Gothe B, Groh A, et al. Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces. 2021;13:32461-32466. doi:10.1021/acsami.1c05764 apa: Zhao, B., Gothe, B., Groh, A., Schmaltz, T., Will, J., Steinrück, H.-G., Unruh, T., Mecking, S., & Halik, M. (2021). Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces, 13, 32461–32466. https://doi.org/10.1021/acsami.1c05764 bibtex: '@article{Zhao_Gothe_Groh_Schmaltz_Will_Steinrück_Unruh_Mecking_Halik_2021, title={Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors}, volume={13}, DOI={10.1021/acsami.1c05764}, journal={ACS Applied Materials & Interfaces}, author={Zhao, Baolin and Gothe, Bastian and Groh, Arthur and Schmaltz, Thomas and Will, Johannes and Steinrück, Hans-Georg and Unruh, Tobias and Mecking, Stefan and Halik, Marcus}, year={2021}, pages={32461–32466} }' chicago: 'Zhao, Baolin, Bastian Gothe, Arthur Groh, Thomas Schmaltz, Johannes Will, Hans-Georg Steinrück, Tobias Unruh, Stefan Mecking, and Marcus Halik. “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors.” ACS Applied Materials & Interfaces 13 (2021): 32461–66. https://doi.org/10.1021/acsami.1c05764.' ieee: 'B. Zhao et al., “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors,” ACS Applied Materials & Interfaces, vol. 13, pp. 32461–32466, 2021, doi: 10.1021/acsami.1c05764.' mla: Zhao, Baolin, et al. “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors.” ACS Applied Materials & Interfaces, vol. 13, 2021, pp. 32461–66, doi:10.1021/acsami.1c05764. short: B. Zhao, B. Gothe, A. Groh, T. Schmaltz, J. Will, H.-G. Steinrück, T. Unruh, S. Mecking, M. Halik, ACS Applied Materials & Interfaces 13 (2021) 32461–32466. date_created: 2021-09-01T09:09:36Z date_updated: 2022-01-06T06:55:57Z department: - _id: '633' doi: 10.1021/acsami.1c05764 intvolume: ' 13' language: - iso: eng page: 32461-32466 publication: ACS Applied Materials & Interfaces publication_identifier: issn: - 1944-8244 - 1944-8252 publication_status: published status: public title: Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors type: journal_article user_id: '84268' volume: 13 year: '2021' ...