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<titleInfo><title>Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors</title></titleInfo>


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  <namePart type="given">Artoem</namePart>
  <namePart type="family">Khassanov</namePart>
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  <namePart type="given">Thomas</namePart>
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  <namePart type="given">Hans-Georg</namePart>
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  <namePart type="given">Andreas</namePart>
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<originInfo><dateIssued encoding="w3cdtf">2014</dateIssued>
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<relatedItem type="host"><titleInfo><title>Advanced Materials Interfaces</title></titleInfo>
  <identifier type="issn">2196-7350</identifier><identifier type="doi">10.1002/admi.201400238</identifier>
<part><detail type="volume"><number>1</number></detail><extent unit="pages">1400238</extent>
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<chicago>Khassanov, Artoem, Thomas Schmaltz, Hans-Georg Steinrück, Andreas Magerl, Andreas Hirsch, and Marcus Halik. “Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors.” &lt;i&gt;Advanced Materials Interfaces&lt;/i&gt; 1 (2014): 1400238. &lt;a href=&quot;https://doi.org/10.1002/admi.201400238&quot;&gt;https://doi.org/10.1002/admi.201400238&lt;/a&gt;.</chicago>
<ieee>A. Khassanov, T. Schmaltz, H.-G. Steinrück, A. Magerl, A. Hirsch, and M. Halik, “Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors,” &lt;i&gt;Advanced Materials Interfaces&lt;/i&gt;, vol. 1, p. 1400238, 2014, doi: &lt;a href=&quot;https://doi.org/10.1002/admi.201400238&quot;&gt;10.1002/admi.201400238&lt;/a&gt;.</ieee>
<ama>Khassanov A, Schmaltz T, Steinrück H-G, Magerl A, Hirsch A, Halik M. Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors. &lt;i&gt;Advanced Materials Interfaces&lt;/i&gt;. 2014;1:1400238. doi:&lt;a href=&quot;https://doi.org/10.1002/admi.201400238&quot;&gt;10.1002/admi.201400238&lt;/a&gt;</ama>
<mla>Khassanov, Artoem, et al. “Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors.” &lt;i&gt;Advanced Materials Interfaces&lt;/i&gt;, vol. 1, 2014, p. 1400238, doi:&lt;a href=&quot;https://doi.org/10.1002/admi.201400238&quot;&gt;10.1002/admi.201400238&lt;/a&gt;.</mla>
<short>A. Khassanov, T. Schmaltz, H.-G. Steinrück, A. Magerl, A. Hirsch, M. Halik, Advanced Materials Interfaces 1 (2014) 1400238.</short>
<bibtex>@article{Khassanov_Schmaltz_Steinrück_Magerl_Hirsch_Halik_2014, title={Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors}, volume={1}, DOI={&lt;a href=&quot;https://doi.org/10.1002/admi.201400238&quot;&gt;10.1002/admi.201400238&lt;/a&gt;}, journal={Advanced Materials Interfaces}, author={Khassanov, Artoem and Schmaltz, Thomas and Steinrück, Hans-Georg and Magerl, Andreas and Hirsch, Andreas and Halik, Marcus}, year={2014}, pages={1400238} }</bibtex>
<apa>Khassanov, A., Schmaltz, T., Steinrück, H.-G., Magerl, A., Hirsch, A., &amp;#38; Halik, M. (2014). Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors. &lt;i&gt;Advanced Materials Interfaces&lt;/i&gt;, &lt;i&gt;1&lt;/i&gt;, 1400238. &lt;a href=&quot;https://doi.org/10.1002/admi.201400238&quot;&gt;https://doi.org/10.1002/admi.201400238&lt;/a&gt;</apa>
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