{"language":[{"iso":"eng"}],"citation":{"mla":"Beloufa, Abbes, et al. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” <i>Journal of Electronic Materials</i>, 2020, pp. 2008–17, doi:<a href=\"https://doi.org/10.1007/s11664-019-07927-8\">10.1007/s11664-019-07927-8</a>.","ama":"Beloufa A, Bouguenna D, Kermas N, As DJ. A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. <i>Journal of Electronic Materials</i>. 2020:2008-2017. doi:<a href=\"https://doi.org/10.1007/s11664-019-07927-8\">10.1007/s11664-019-07927-8</a>","chicago":"Beloufa, Abbes, Driss Bouguenna, Nawel Kermas, and Donat Josef As. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” <i>Journal of Electronic Materials</i>, 2020, 2008–17. <a href=\"https://doi.org/10.1007/s11664-019-07927-8\">https://doi.org/10.1007/s11664-019-07927-8</a>.","bibtex":"@article{Beloufa_Bouguenna_Kermas_As_2020, title={A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs}, DOI={<a href=\"https://doi.org/10.1007/s11664-019-07927-8\">10.1007/s11664-019-07927-8</a>}, journal={Journal of Electronic Materials}, author={Beloufa, Abbes and Bouguenna, Driss and Kermas, Nawel and As, Donat Josef}, year={2020}, pages={2008–2017} }","ieee":"A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,” <i>Journal of Electronic Materials</i>, pp. 2008–2017, 2020.","apa":"Beloufa, A., Bouguenna, D., Kermas, N., &#38; As, D. J. (2020). A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. <i>Journal of Electronic Materials</i>, 2008–2017. <a href=\"https://doi.org/10.1007/s11664-019-07927-8\">https://doi.org/10.1007/s11664-019-07927-8</a>","short":"A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017."},"_id":"23838","page":"2008-2017","department":[{"_id":"230"}],"author":[{"last_name":"Beloufa","first_name":"Abbes","full_name":"Beloufa, Abbes"},{"full_name":"Bouguenna, Driss","first_name":"Driss","last_name":"Bouguenna"},{"first_name":"Nawel","full_name":"Kermas, Nawel","last_name":"Kermas"},{"last_name":"As","orcid":"0000-0003-1121-3565","id":"14","first_name":"Donat Josef","full_name":"As, Donat Josef"}],"user_id":"14","title":"A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs","publication_identifier":{"issn":["0361-5235","1543-186X"]},"doi":"10.1007/s11664-019-07927-8","year":"2020","publication":"Journal of Electronic Materials","status":"public","type":"journal_article","date_created":"2021-09-07T09:15:01Z","date_updated":"2022-01-06T06:56:01Z","publication_status":"published"}