{"publication_status":"published","date_updated":"2023-10-09T09:01:15Z","type":"journal_article","user_id":"14931","language":[{"iso":"eng"}],"doi":"10.1063/5.0053865","citation":{"chicago":"Meier, F., M. Protte, E. Baron, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” <i>AIP Advances</i>, 2021. <a href=\"https://doi.org/10.1063/5.0053865\">https://doi.org/10.1063/5.0053865</a>.","bibtex":"@article{Meier_Protte_Baron_Feneberg_Goldhahn_Reuter_As_2021, title={Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)}, DOI={<a href=\"https://doi.org/10.1063/5.0053865\">10.1063/5.0053865</a>}, number={075013}, journal={AIP Advances}, author={Meier, F. and Protte, M. and Baron, E. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}, year={2021} }","short":"F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).","ieee":"F. Meier <i>et al.</i>, “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” <i>AIP Advances</i>, Art. no. 075013, 2021, doi: <a href=\"https://doi.org/10.1063/5.0053865\">10.1063/5.0053865</a>.","ama":"Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). <i>AIP Advances</i>. Published online 2021. doi:<a href=\"https://doi.org/10.1063/5.0053865\">10.1063/5.0053865</a>","mla":"Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” <i>AIP Advances</i>, 075013, 2021, doi:<a href=\"https://doi.org/10.1063/5.0053865\">10.1063/5.0053865</a>.","apa":"Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., &#38; As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). <i>AIP Advances</i>, Article 075013. <a href=\"https://doi.org/10.1063/5.0053865\">https://doi.org/10.1063/5.0053865</a>"},"author":[{"first_name":"F.","last_name":"Meier","full_name":"Meier, F."},{"first_name":"M.","last_name":"Protte","full_name":"Protte, M."},{"full_name":"Baron, E.","first_name":"E.","last_name":"Baron"},{"last_name":"Feneberg","first_name":"M.","full_name":"Feneberg, M."},{"first_name":"R.","last_name":"Goldhahn","full_name":"Goldhahn, R."},{"full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763","first_name":"Dirk"},{"last_name":"As","first_name":"Donat Josef","id":"14","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef"}],"_id":"23843","status":"public","publication":"AIP Advances","department":[{"_id":"230"},{"_id":"429"}],"title":"Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)","article_number":"075013","date_created":"2021-09-07T09:20:42Z","year":"2021","publication_identifier":{"issn":["2158-3226"]}}