---
res:
  bibo_abstract:
  - This paper presents a broadband track-and-hold amplifier (THA) based on switched-emitter-follower
    (SEF) topology. The THA exhibits both large- and small-signal bandwidth exeeding
    60 GHz. It achieves an effective number of bits (ENOB) of 7 bit at 34 GHz input
    frequency and an ENOB of >5 bit over the whole input frequency bandwidth at sampling
    rate of 10 GS/s. Much higher sampling rates are possible but lead to somewhat
    worse performance. The chip was fabricated in a 130 nm SiGe BiCMOS technology
    from IHP (SG13G2). It draws 78 mA from a -4.8 V supply voltage, dissipating 375
    mW.@eng
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: Liang
      foaf_name: Wu, Liang
      foaf_surname: Wu
      foaf_workInfoHomepage: http://www.librecat.org/personId=30401
  - foaf_Person:
      foaf_givenName: Maxim
      foaf_name: Weizel, Maxim
      foaf_surname: Weizel
      foaf_workInfoHomepage: http://www.librecat.org/personId=44271
    orcid: https://orcid.org/0000-0003-2699-9839
  - foaf_Person:
      foaf_givenName: Christoph
      foaf_name: Scheytt, Christoph
      foaf_surname: Scheytt
      foaf_workInfoHomepage: http://www.librecat.org/personId=37144
    orcid: '0000-0002-5950-6618 '
  bibo_doi: 10.1109/ISCAS45731.2020.9180947
  dct_date: 2020^xs_gYear
  dct_isPartOf:
  - 'http://id.crossref.org/issn/2158-1525 '
  - http://id.crossref.org/issn/978-1-7281-3320-1
  dct_language: eng
  dct_publisher: IEEE@
  dct_title: Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier
    in 130 nm SiGe BiCMOS Technology@
...