[{"citation":{"apa":"Wu, L., Weizel, M., &#38; Scheytt, C. (2019). A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology. <i>26th IEEE International Conference on Electronics Circuits and Systems (ICECS)</i>. <a href=\"https://doi.org/10.1109/ICECS46596.2019.8965046\">https://doi.org/10.1109/ICECS46596.2019.8965046</a>","mla":"Wu, Liang, et al. “A 70 GHz Small-Signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 Nm SiGe BiCMOS Technology.” <i>26th IEEE International Conference on Electronics Circuits and Systems (ICECS)</i>, 2019, doi:<a href=\"https://doi.org/10.1109/ICECS46596.2019.8965046\">10.1109/ICECS46596.2019.8965046</a>.","bibtex":"@inproceedings{Wu_Weizel_Scheytt_2019, place={Genova, Italy}, title={A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology}, DOI={<a href=\"https://doi.org/10.1109/ICECS46596.2019.8965046\">10.1109/ICECS46596.2019.8965046</a>}, booktitle={26th IEEE International Conference on Electronics Circuits and Systems (ICECS)}, author={Wu, Liang and Weizel, Maxim and Scheytt, Christoph}, year={2019} }","short":"L. Wu, M. Weizel, C. Scheytt, in: 26th IEEE International Conference on Electronics Circuits and Systems (ICECS), Genova, Italy, 2019.","ieee":"L. Wu, M. Weizel, and C. Scheytt, “A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology,” 2019, doi: <a href=\"https://doi.org/10.1109/ICECS46596.2019.8965046\">10.1109/ICECS46596.2019.8965046</a>.","chicago":"Wu, Liang, Maxim Weizel, and Christoph Scheytt. “A 70 GHz Small-Signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 Nm SiGe BiCMOS Technology.” In <i>26th IEEE International Conference on Electronics Circuits and Systems (ICECS)</i>. Genova, Italy, 2019. <a href=\"https://doi.org/10.1109/ICECS46596.2019.8965046\">https://doi.org/10.1109/ICECS46596.2019.8965046</a>.","ama":"Wu L, Weizel M, Scheytt C. A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology. In: <i>26th IEEE International Conference on Electronics Circuits and Systems (ICECS)</i>. ; 2019. doi:<a href=\"https://doi.org/10.1109/ICECS46596.2019.8965046\">10.1109/ICECS46596.2019.8965046</a>"},"year":"2019","place":"Genova, Italy","author":[{"first_name":"Liang","last_name":"Wu","id":"30401","full_name":"Wu, Liang"},{"first_name":"Maxim","orcid":"https://orcid.org/0000-0003-2699-9839","last_name":"Weizel","full_name":"Weizel, Maxim","id":"44271"},{"first_name":"Christoph","orcid":"0000-0002-5950-6618 ","last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph"}],"date_created":"2021-09-09T12:26:06Z","date_updated":"2025-02-13T12:09:29Z","conference":{"start_date":"2019.11.27","end_date":"2019.11.29"},"doi":"10.1109/ICECS46596.2019.8965046","title":"A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology","type":"conference","publication":"26th IEEE International Conference on Electronics Circuits and Systems (ICECS)","status":"public","abstract":[{"text":"This paper presents a broadband track-and-hold amplifier (THA) based on switched-emitter-follower (SEF) topology. The THA exhibits a record 3dB small-signal bandwidth of 70 GHz. With the high sampling rate of 40 GS/s, it achieves an effective number of bits (ENOB) of 7.5 bit at 1 GHz input frequency and an ENOB of >5 bit up to 15 GHz input frequency. The chip was fabricated in a 130 nm SiGe BiCMOS technology from IHP (SG13G2). It draws 110 mA from a -4 V supply voltage, dissipating 440 mW.","lang":"eng"}],"user_id":"44271","department":[{"_id":"58"}],"_id":"24052","language":[{"iso":"eng"}]}]