{"conference":{"end_date":"2019.11.29","start_date":"2019.11.27"},"publication":"26th IEEE International Conference on Electronics Circuits and Systems (ICECS)","date_updated":"2022-01-06T06:56:06Z","type":"conference","doi":"10.1109/ICECS46596.2019.8965046","language":[{"iso":"eng"}],"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/8965046","relation":"confirmation"}]},"citation":{"bibtex":"@inproceedings{Wu_Weizel_Scheytt_2019, place={Genova, Italy}, title={A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology}, DOI={10.1109/ICECS46596.2019.8965046}, booktitle={26th IEEE International Conference on Electronics Circuits and Systems (ICECS)}, author={Wu, Liang and Weizel, Maxim and Scheytt, Christoph}, year={2019} }","mla":"Wu, Liang, et al. “A 70 GHz Small-Signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 Nm SiGe BiCMOS Technology.” 26th IEEE International Conference on Electronics Circuits and Systems (ICECS), 2019, doi:10.1109/ICECS46596.2019.8965046.","ama":"Wu L, Weizel M, Scheytt C. A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology. In: 26th IEEE International Conference on Electronics Circuits and Systems (ICECS). ; 2019. doi:10.1109/ICECS46596.2019.8965046","ieee":"L. Wu, M. Weizel, and C. Scheytt, “A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology,” 2019, doi: 10.1109/ICECS46596.2019.8965046.","chicago":"Wu, Liang, Maxim Weizel, and Christoph Scheytt. “A 70 GHz Small-Signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 Nm SiGe BiCMOS Technology.” In 26th IEEE International Conference on Electronics Circuits and Systems (ICECS). Genova, Italy, 2019. https://doi.org/10.1109/ICECS46596.2019.8965046.","short":"L. Wu, M. Weizel, C. Scheytt, in: 26th IEEE International Conference on Electronics Circuits and Systems (ICECS), Genova, Italy, 2019.","apa":"Wu, L., Weizel, M., & Scheytt, C. (2019). A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology. 26th IEEE International Conference on Electronics Circuits and Systems (ICECS). https://doi.org/10.1109/ICECS46596.2019.8965046"},"user_id":"15931","date_created":"2021-09-09T12:26:06Z","department":[{"_id":"58"}],"title":"A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology","_id":"24052","abstract":[{"lang":"eng","text":"This paper presents a broadband track-and-hold amplifier (THA) based on switched-emitter-follower (SEF) topology. The THA exhibits a record 3dB small-signal bandwidth of 70 GHz. With the high sampling rate of 40 GS/s, it achieves an effective number of bits (ENOB) of 7.5 bit at 1 GHz input frequency and an ENOB of >5 bit up to 15 GHz input frequency. The chip was fabricated in a 130 nm SiGe BiCMOS technology from IHP (SG13G2). It draws 110 mA from a -4 V supply voltage, dissipating 440 mW."}],"author":[{"full_name":"Wu, Liang","last_name":"Wu","id":"30401","first_name":"Liang"},{"orcid":"https://orcid.org/0000-0003-2699-9839","first_name":"Maxim","full_name":"Weizel, Maxim","last_name":"Weizel","id":"44271"},{"first_name":"Christoph","full_name":"Scheytt, Christoph","last_name":"Scheytt","id":"37144"}],"status":"public","place":"Genova, Italy","year":"2019"}