{"date_created":"2021-09-13T09:44:31Z","citation":{"short":"Y. Mao, K. Schmalz, C. Scheytt, E. Shiju, in: IEEE International Symposium on Radio-Frequency Integration Technology, Taipei, Taiwan, 2016.","chicago":"Mao, Yanfei, Klaus Schmalz, Christoph Scheytt, and E. Shiju. “An All-Transmission-Line 220 GHz Differential LNA in SiGe BiCMOS.” In <i>IEEE International Symposium on Radio-Frequency Integration Technology</i>. Taipei, Taiwan, 2016. <a href=\"https://doi.org/10.1109/RFIT.2016.7578132\">https://doi.org/10.1109/RFIT.2016.7578132</a>.","bibtex":"@inproceedings{Mao_Schmalz_Scheytt_Shiju_2016, place={Taipei, Taiwan}, title={An all-transmission-line 220 GHz differential LNA in SiGe BiCMOS}, DOI={<a href=\"https://doi.org/10.1109/RFIT.2016.7578132\">10.1109/RFIT.2016.7578132</a>}, booktitle={IEEE International Symposium on Radio-Frequency Integration Technology}, author={Mao, Yanfei and Schmalz, Klaus and Scheytt, Christoph and Shiju, E.}, year={2016} }","apa":"Mao, Y., Schmalz, K., Scheytt, C., &#38; Shiju, E. (2016). An all-transmission-line 220 GHz differential LNA in SiGe BiCMOS. <i>IEEE International Symposium on Radio-Frequency Integration Technology</i>. <a href=\"https://doi.org/10.1109/RFIT.2016.7578132\">https://doi.org/10.1109/RFIT.2016.7578132</a>","ieee":"Y. Mao, K. Schmalz, C. Scheytt, and E. Shiju, “An all-transmission-line 220 GHz differential LNA in SiGe BiCMOS,” 2016, doi: <a href=\"https://doi.org/10.1109/RFIT.2016.7578132\">10.1109/RFIT.2016.7578132</a>.","mla":"Mao, Yanfei, et al. “An All-Transmission-Line 220 GHz Differential LNA in SiGe BiCMOS.” <i>IEEE International Symposium on Radio-Frequency Integration Technology</i>, 2016, doi:<a href=\"https://doi.org/10.1109/RFIT.2016.7578132\">10.1109/RFIT.2016.7578132</a>.","ama":"Mao Y, Schmalz K, Scheytt C, Shiju E. An all-transmission-line 220 GHz differential LNA in SiGe BiCMOS. In: <i>IEEE International Symposium on Radio-Frequency Integration Technology</i>. ; 2016. doi:<a href=\"https://doi.org/10.1109/RFIT.2016.7578132\">10.1109/RFIT.2016.7578132</a>"},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/7578132"}]},"user_id":"15931","department":[{"_id":"58"}],"publication_identifier":{"eisbn":["978-1-5090-1235-0"]},"_id":"24265","title":"An all-transmission-line 220 GHz differential LNA in SiGe BiCMOS","author":[{"last_name":"Mao","full_name":"Mao, Yanfei","first_name":"Yanfei"},{"first_name":"Klaus","last_name":"Schmalz","full_name":"Schmalz, Klaus"},{"full_name":"Scheytt, Christoph","last_name":"Scheytt","id":"37144","first_name":"Christoph"},{"full_name":"Shiju, E.","last_name":"Shiju","first_name":"E."}],"abstract":[{"lang":"eng","text":"This paper presents a four stage all-transmission-line 220 GHz differential LNA in SiGe BiCMOS technology. Cascode topology is chosen for each stage. The amplifier takes advantage of microstrip transmission lines to realize the inductive load, Marshand balun, input, output, and inter-stage matching of the LNA. The LNA has a gain of 21 dB at 224 GHz, a 3 dB bandwidth of more than 6 GHz. It has a supply voltage of 3V and power dissipation of 234 mW. The amplifier is intended for the use in communication, security scanning, imaging and remote sensing at 220 GHz."}],"place":"Taipei, Taiwan","year":"2016","status":"public","publication":"IEEE International Symposium on Radio-Frequency Integration Technology","conference":{"start_date":"2016.08.24","end_date":"2016.08.26"},"date_updated":"2022-02-17T14:00:40Z","type":"conference","doi":"10.1109/RFIT.2016.7578132","language":[{"iso":"eng"}]}