{"author":[{"first_name":"Mohamed","full_name":"Elkhouly, Mohamed","last_name":"Elkhouly"},{"first_name":"Yanfei","full_name":"Mao, Yanfei","last_name":"Mao"},{"first_name":"Chafik","full_name":"Meliani, Chafik","last_name":"Meliani"},{"first_name":"Christoph","id":"37144","last_name":"Scheytt","full_name":"Scheytt, Christoph"},{"full_name":"Ellinger, Frank","last_name":"Ellinger","first_name":"Frank"}],"status":"public","year":"2014","intvolume":"        49","user_id":"15931","issue":"9","date_created":"2021-09-14T07:06:52Z","volume":49,"department":[{"_id":"58"}],"language":[{"iso":"eng"}],"date_updated":"2022-02-17T12:48:32Z","citation":{"chicago":"Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Christoph Scheytt, and Frank Ellinger. “A -Band Four-Element Butler Matrix in 0.13 Μm SiGe BiCMOS Technology.” <i>IEEE JOURNAL OF SOLID-STATE CIRCUITS</i> 49, no. 9 (2014).","ieee":"M. Elkhouly, Y. Mao, C. Meliani, C. Scheytt, and F. Ellinger, “A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology,” <i>IEEE JOURNAL OF SOLID-STATE CIRCUITS</i>, vol. 49, no. 9, 2014.","ama":"Elkhouly M, Mao Y, Meliani C, Scheytt C, Ellinger F. A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology. <i>IEEE JOURNAL OF SOLID-STATE CIRCUITS</i>. 2014;49(9).","bibtex":"@article{Elkhouly_Mao_Meliani_Scheytt_Ellinger_2014, title={A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology}, volume={49}, number={9}, journal={IEEE JOURNAL OF SOLID-STATE CIRCUITS}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Scheytt, Christoph and Ellinger, Frank}, year={2014} }","apa":"Elkhouly, M., Mao, Y., Meliani, C., Scheytt, C., &#38; Ellinger, F. (2014). A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology. <i>IEEE JOURNAL OF SOLID-STATE CIRCUITS</i>, <i>49</i>(9).","short":"M. Elkhouly, Y. Mao, C. Meliani, C. Scheytt, F. Ellinger, IEEE JOURNAL OF SOLID-STATE CIRCUITS 49 (2014).","mla":"Elkhouly, Mohamed, et al. “A -Band Four-Element Butler Matrix in 0.13 Μm SiGe BiCMOS Technology.” <i>IEEE JOURNAL OF SOLID-STATE CIRCUITS</i>, vol. 49, no. 9, 2014."},"type":"journal_article","title":"A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology","_id":"24306","publication":"IEEE JOURNAL OF SOLID-STATE CIRCUITS"}