--- res: bibo_abstract: - This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm 2 .@eng bibo_authorlist: - foaf_Person: foaf_givenName: Mohamed foaf_name: Elkhouly, Mohamed foaf_surname: Elkhouly - foaf_Person: foaf_givenName: Yanfei foaf_name: Mao, Yanfei foaf_surname: Mao - foaf_Person: foaf_givenName: Chafik foaf_name: Meliani, Chafik foaf_surname: Meliani - foaf_Person: foaf_givenName: Frank foaf_name: Ellinger, Frank foaf_surname: Ellinger - foaf_Person: foaf_givenName: Christoph foaf_name: Scheytt, Christoph foaf_surname: Scheytt foaf_workInfoHomepage: http://www.librecat.org/personId=37144 bibo_doi: 10.1109/BCTM.2013.6798158 dct_date: 2013^xs_gYear dct_language: eng dct_title: A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology @ ...