{"department":[{"_id":"58"}],"publication":"IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,","author":[{"first_name":"Mohamed","full_name":"Elkhouly, Mohamed","last_name":"Elkhouly"},{"last_name":"Mao","first_name":"Yanfei","full_name":"Mao, Yanfei"},{"last_name":"Meliani","first_name":"Chafik","full_name":"Meliani, Chafik"},{"full_name":"Ellinger, Frank","first_name":"Frank","last_name":"Ellinger"},{"id":"37144","last_name":"Scheytt","full_name":"Scheytt, Christoph","first_name":"Christoph"}],"date_created":"2021-09-14T09:22:15Z","status":"public","abstract":[{"lang":"eng","text":"This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm 2 ."}],"place":"Bordeaux, France,","title":"A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ","related_material":{"link":[{"relation":"confirmation","url":"https://ris.uni-paderborn.de/record/24341"}]},"user_id":"15931","type":"conference","year":"2013","citation":{"short":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING, Bordeaux, France, 2013.","ieee":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ,” 2013, doi: 10.1109/BCTM.2013.6798158.","chicago":"Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology .” In IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,. Bordeaux, France, 2013. https://doi.org/10.1109/BCTM.2013.6798158.","ama":"Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . In: IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,. ; 2013. doi:10.1109/BCTM.2013.6798158","apa":"Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., & Scheytt, C. (2013). A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,. https://doi.org/10.1109/BCTM.2013.6798158","bibtex":"@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Bordeaux, France,}, title={A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology }, DOI={10.1109/BCTM.2013.6798158}, booktitle={IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013} }","mla":"Elkhouly, Mohamed, et al. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology .” IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING, 2013, doi:10.1109/BCTM.2013.6798158."},"language":[{"iso":"eng"}],"date_updated":"2022-01-11T09:20:48Z","_id":"24341","doi":"10.1109/BCTM.2013.6798158"}