{"issue":"5","language":[{"iso":"eng"}],"type":"journal_article","date_updated":"2022-01-18T10:15:31Z","publication":"Microwave Theory and Techniques, IEEE Transactions on","page":"2185-2194","doi":"10.1109/TMTT.2013.2253792","abstract":[{"lang":"eng","text":"In this paper, an integrated dielectric sensor with a read-out circuit in an unmodified SiGe BiCMOS technology at 125 GHz is presented. The sensor consists of a 500-μm shorted half-wave coplanar-waveguide transmission line in the uppermost metal layer of the silicon process, while the read-out is obtained by reflection coefficient measurement with an integrated reflectometer and a signal source. The reflectometer is verified with a circuit breakout including an integrated dummy sensor. The reflectometer is able to measure the phase of the reflection coefficient from 117 to 134 GHz with a resolution of 0.1° and a standard deviation of 0.082°. The integrated sensor with the reflectometer circuit have been fabricated in a 190-GHz fT SiGe:C BiCMOS technology. It spans an area of 1.4 mm 2 and consumes 75 mA from a 3.3-V supply. The circuit has been assembled on a printed circuit board for characterization by immersion into test liquids. The sensor is controlled by a controller board and a personal computer enabling a measurement time of up to 1 ms per frequency point. Functionality of the sensor is demonstrated from 118 to 133 GHz with immersion of the sensor into different binary methanol-ethanol mixtures, showing good correlation between theory and measurement. The sensor shows a standard deviation of the measured phase of 0.220° and is able to detect a difference in ε' r of 0.0125"}],"author":[{"full_name":"Laemmle, Benjamin","last_name":"Laemmle","first_name":"Benjamin"},{"first_name":"Klaus","last_name":"Schmalz","full_name":"Schmalz, Klaus"},{"last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph","first_name":"Christoph"},{"first_name":"Robert","last_name":"Weigel","full_name":"Weigel, Robert"},{"first_name":"Dietmar","full_name":"Kissinger, Dietmar","last_name":"Kissinger"}],"year":"2013","status":"public","intvolume":"        61","date_created":"2021-09-14T09:22:23Z","user_id":"15931","citation":{"ieee":"B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, and D. Kissinger, “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology,” <i>Microwave Theory and Techniques, IEEE Transactions on</i>, vol. 61, no. 5, pp. 2185–2194, 2013, doi: <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>.","bibtex":"@article{Laemmle_Schmalz_Scheytt_Weigel_Kissinger_2013, title={A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology}, volume={61}, DOI={<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>}, number={5}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger, Dietmar}, year={2013}, pages={2185–2194} }","mla":"Laemmle, Benjamin, et al. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i>, vol. 61, no. 5, 2013, pp. 2185–94, doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>.","ama":"Laemmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D. A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions on</i>. 2013;61(5):2185-2194. doi:<a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">10.1109/TMTT.2013.2253792</a>","apa":"Laemmle, B., Schmalz, K., Scheytt, C., Weigel, R., &#38; Kissinger, D. (2013). A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology. <i>Microwave Theory and Techniques, IEEE Transactions On</i>, <i>61</i>(5), 2185–2194. <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">https://doi.org/10.1109/TMTT.2013.2253792</a>","short":"B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, D. Kissinger, Microwave Theory and Techniques, IEEE Transactions On 61 (2013) 2185–2194.","chicago":"Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Robert Weigel, and Dietmar Kissinger. “A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-Nm SiGe BiCMOS Technology.” <i>Microwave Theory and Techniques, IEEE Transactions On</i> 61, no. 5 (2013): 2185–94. <a href=\"https://doi.org/10.1109/TMTT.2013.2253792\">https://doi.org/10.1109/TMTT.2013.2253792</a>."},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6492143"}]},"volume":61,"title":"A 125-GHz Permittivity Sensor With Read-Out Circuit in a 250-nm SiGe BiCMOS Technology","_id":"24347","department":[{"_id":"58"}]}