{"title":"220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology","_id":"24350","department":[{"_id":"58"}],"volume":"PP","user_id":"15931","citation":{"bibtex":"@article{Elkhouly_Glisic_Meliani_Ellinger_Scheytt_2013, title={220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology}, volume={PP}, DOI={10.1109/TMTT.2013.2258032}, number={99}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Elkhouly, Mohamed and Glisic, Srdjan and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013}, pages={1–13} }","short":"M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On PP (2013) 1–13.","chicago":"Elkhouly, Mohamed, Srdjan Glisic, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology.” Microwave Theory and Techniques, IEEE Transactions On PP, no. 99 (2013): 1–13. https://doi.org/10.1109/TMTT.2013.2258032.","ieee":"M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, and C. Scheytt, “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology,” Microwave Theory and Techniques, IEEE Transactions on, vol. PP, no. 99, pp. 1–13, 2013, doi: 10.1109/TMTT.2013.2258032.","ama":"Elkhouly M, Glisic S, Meliani C, Ellinger F, Scheytt C. 220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology. Microwave Theory and Techniques, IEEE Transactions on. 2013;PP(99):1-13. doi:10.1109/TMTT.2013.2258032","mla":"Elkhouly, Mohamed, et al. “220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology.” Microwave Theory and Techniques, IEEE Transactions On, vol. PP, no. 99, 2013, pp. 1–13, doi:10.1109/TMTT.2013.2258032.","apa":"Elkhouly, M., Glisic, S., Meliani, C., Ellinger, F., & Scheytt, C. (2013). 220–250-GHz Phased-Array Circuits in 0.13- \\mu\\hbox m SiGe BiCMOS Technology. Microwave Theory and Techniques, IEEE Transactions On, PP(99), 1–13. https://doi.org/10.1109/TMTT.2013.2258032"},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6507360"}]},"date_created":"2021-09-14T09:22:27Z","status":"public","year":"2013","abstract":[{"lang":"eng","text":"This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication."}],"author":[{"first_name":"Mohamed","full_name":"Elkhouly, Mohamed","last_name":"Elkhouly"},{"last_name":"Glisic","full_name":"Glisic, Srdjan","first_name":"Srdjan"},{"last_name":"Meliani","full_name":"Meliani, Chafik","first_name":"Chafik"},{"full_name":"Ellinger, Frank","last_name":"Ellinger","first_name":"Frank"},{"id":"37144","last_name":"Scheytt","full_name":"Scheytt, Christoph","first_name":"Christoph"}],"doi":"10.1109/TMTT.2013.2258032","page":"1-13","date_updated":"2022-01-18T10:25:50Z","type":"journal_article","publication":"Microwave Theory and Techniques, IEEE Transactions on","language":[{"iso":"eng"}],"issue":"99"}