{"doi":"10.1109/SiRF.2013.6489443","conference":{"start_date":"2013.01.21","end_date":"2013.01.23"},"publication":"Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on","type":"conference","date_updated":"2022-02-17T09:01:16Z","page":"93-95","language":[{"iso":"eng"}],"publication_identifier":{"eisbn":["978-1-4673-1553-1"]},"department":[{"_id":"58"}],"_id":"24355","title":"Integrator and digitizer for a non-coherent IR-UWB receiver","date_created":"2021-09-14T09:22:33Z","citation":{"ieee":"J. Digel <i>et al.</i>, “Integrator and digitizer for a non-coherent IR-UWB receiver,” in <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on</i>, 2013, pp. 93–95, doi: <a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">10.1109/SiRF.2013.6489443</a>.","ama":"Digel J, Masini M, Grözing M, et al. Integrator and digitizer for a non-coherent IR-UWB receiver. In: <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>. ; 2013:93-95. doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">10.1109/SiRF.2013.6489443</a>","mla":"Digel, Johannes, et al. “Integrator and Digitizer for a Non-Coherent IR-UWB Receiver.” <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 2013, pp. 93–95, doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">10.1109/SiRF.2013.6489443</a>.","apa":"Digel, J., Masini, M., Grözing, M., Berroth, M., Fischer, G., Olonbayar, S., Gustat, H., &#38; Scheytt, C. (2013). Integrator and digitizer for a non-coherent IR-UWB receiver. <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 93–95. <a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">https://doi.org/10.1109/SiRF.2013.6489443</a>","bibtex":"@inproceedings{Digel_Masini_Grözing_Berroth_Fischer_Olonbayar_Gustat_Scheytt_2013, title={Integrator and digitizer for a non-coherent IR-UWB receiver}, DOI={<a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">10.1109/SiRF.2013.6489443</a>}, booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on}, author={Digel, Johannes and Masini, Michelangelo and Grözing, Markus and Berroth, Manfred and Fischer, Gunter and Olonbayar, Sonom and Gustat, Hans and Scheytt, Christoph}, year={2013}, pages={93–95} }","chicago":"Digel, Johannes, Michelangelo Masini, Markus Grözing, Manfred Berroth, Gunter Fischer, Sonom Olonbayar, Hans Gustat, and Christoph Scheytt. “Integrator and Digitizer for a Non-Coherent IR-UWB Receiver.” In <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 93–95, 2013. <a href=\"https://doi.org/10.1109/SiRF.2013.6489443\">https://doi.org/10.1109/SiRF.2013.6489443</a>.","short":"J. Digel, M. Masini, M. Grözing, M. Berroth, G. Fischer, S. Olonbayar, H. Gustat, C. Scheytt, in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013, pp. 93–95."},"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6489443","relation":"confirmation"}]},"user_id":"15931","year":"2013","status":"public","abstract":[{"text":"Impulse-radio ultra-wideband systems (IR-UWB) provide short-range wireless communication and precise localization simultaneously. Especially non-coherent IR-UWB reduces the system complexity which enables the design of low-power receivers. This paper presents an integrating digitizer which integrates rectified baseband pulses of an IR-UWB signal and provides the digitized data to the digital baseband of the receiver. The integrator is composed of two time-interleaved (TI) operational amplifiers with capacitive feedback. With this structure, the integrator can be periodically reset without introducing a dead time between two integration periods. The analog-to-digital conversion is performed by a 6 bit 62.4 MS/s successive approximation register analog-to-digital converter (SAR ADC). The integrating digitizer chip is realized in a 250 nm SiGe:C BiCMOS technology from IHP.","lang":"eng"}],"author":[{"full_name":"Digel, Johannes","last_name":"Digel","first_name":"Johannes"},{"first_name":"Michelangelo","last_name":"Masini","full_name":"Masini, Michelangelo"},{"first_name":"Markus","full_name":"Grözing, Markus","last_name":"Grözing"},{"first_name":"Manfred","last_name":"Berroth","full_name":"Berroth, Manfred"},{"full_name":"Fischer, Gunter","last_name":"Fischer","first_name":"Gunter"},{"first_name":"Sonom","last_name":"Olonbayar","full_name":"Olonbayar, Sonom"},{"first_name":"Hans","full_name":"Gustat, Hans","last_name":"Gustat"},{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"}]}