{"doi":"10.1109/SiRF.2013.6489455","publication":"Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on","conference":{"start_date":"2013.01.21","end_date":"2013.01.23"},"type":"conference","date_updated":"2022-02-17T09:02:41Z","language":[{"iso":"eng"}],"department":[{"_id":"58"}],"publication_identifier":{"eisbn":["978-1-4673-1553-1"]},"_id":"24356","title":"A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology","citation":{"apa":"Laemmle, B., Schmalz, K., Borngräber, J., Scheytt, C., Weigel, R., Koelpin, A., &#38; Kissinger, D. (2013). A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology. <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>. <a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">https://doi.org/10.1109/SiRF.2013.6489455</a>","short":"B. Laemmle, K. Schmalz, J. Borngräber, C. Scheytt, R. Weigel, A. Koelpin, D. Kissinger, in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013.","chicago":"Laemmle, Benjamin, Klaus Schmalz, Johannes Borngräber, Christoph Scheytt, Robert Weigel, Alexander Koelpin, and Dietmar Kissinger. “A Fully Integrated 120-GHz Six-Port Receiver Front-End in a 130-Nm SiGe BiCMOS Technology.” In <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 2013. <a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">https://doi.org/10.1109/SiRF.2013.6489455</a>.","ieee":"B. Laemmle <i>et al.</i>, “A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology,” 2013, doi: <a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">10.1109/SiRF.2013.6489455</a>.","bibtex":"@inproceedings{Laemmle_Schmalz_Borngräber_Scheytt_Weigel_Koelpin_Kissinger_2013, title={A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology}, DOI={<a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">10.1109/SiRF.2013.6489455</a>}, booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on}, author={Laemmle, Benjamin and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph and Weigel, Robert and Koelpin, Alexander and Kissinger, Dietmar}, year={2013} }","mla":"Laemmle, Benjamin, et al. “A Fully Integrated 120-GHz Six-Port Receiver Front-End in a 130-Nm SiGe BiCMOS Technology.” <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>, 2013, doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">10.1109/SiRF.2013.6489455</a>.","ama":"Laemmle B, Schmalz K, Borngräber J, et al. A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology. In: <i>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/SiRF.2013.6489455\">10.1109/SiRF.2013.6489455</a>"},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6489455"}]},"user_id":"15931","date_created":"2021-09-14T09:22:35Z","status":"public","year":"2013","author":[{"first_name":"Benjamin","last_name":"Laemmle","full_name":"Laemmle, Benjamin"},{"first_name":"Klaus","full_name":"Schmalz, Klaus","last_name":"Schmalz"},{"first_name":"Johannes","full_name":"Borngräber, Johannes","last_name":"Borngräber"},{"id":"37144","last_name":"Scheytt","full_name":"Scheytt, Christoph","first_name":"Christoph"},{"full_name":"Weigel, Robert","last_name":"Weigel","first_name":"Robert"},{"last_name":"Koelpin","full_name":"Koelpin, Alexander","first_name":"Alexander"},{"full_name":"Kissinger, Dietmar","last_name":"Kissinger","first_name":"Dietmar"}],"abstract":[{"text":"A fully integrated six-port receiver front-end at 120 GHz center frequency including a low-noise-amplifier, a passive six-port network, a VCO, and four direct converters is presented in this publication. The overall architecture of the designed six-port receiver is analyzed and fundamental theory of the receiver given. The design of the six-port building blocks is described and measurement results are presented. All circuits have been fabricated in a 0.13μm 300-GHz f T SiGe BiCMOS technology. The fully integrated receiver consumes 85.9 rnA from a 3.3-V supply and occupies an area of 1.03mm 2 . The receiver includes a VCO with a center frequency of 117.15 GHz, a tuning range of 2.7 GHz, and a phase noise of -86 dBc/Hz at 1 MHz offset. The LNA shows a gain of 12 dB, a 3-dB bandwidth of 30 GHz at a power consumption of 9.2 rnA. The six-port core has a conversion gain of 3.6 dB, a P 1dB of -12 dBm, and a power consumption of 28 rnA. The overall receiver shows a conversion gain of 2.4 dB at 120 GHz and P 1dB of -17 dBm.","lang":"eng"}]}