A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology
B. Laemmle, K. Schmalz, J. Borngräber, C. Scheytt, R. Weigel, A. Koelpin, D. Kissinger, in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013.