--- res: bibo_abstract: - A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology with f T /f max of 300/500 GHz is presented. The receiver consists of a four stage LNA, an active power divider, an LO IQ generation network, and direct down-conversion fundamental mixers. The integrated IQ receiver yields a conversion gain of 18 dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245 GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5 V supply and 20 mA from 2 V.@eng bibo_authorlist: - foaf_Person: foaf_givenName: Mohamed foaf_name: Elkhouly, Mohamed foaf_surname: Elkhouly - foaf_Person: foaf_givenName: Yanfei foaf_name: Mao, Yanfei foaf_surname: Mao - foaf_Person: foaf_givenName: Chafik foaf_name: Meliani, Chafik foaf_surname: Meliani - foaf_Person: foaf_givenName: Frank foaf_name: Ellinger, Frank foaf_surname: Ellinger - foaf_Person: foaf_givenName: Christoph foaf_name: Scheytt, Christoph foaf_surname: Scheytt foaf_workInfoHomepage: http://www.librecat.org/personId=37144 bibo_doi: 10.1109/RFIC.2013.6569589 dct_date: 2013^xs_gYear dct_language: eng dct_title: A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology@ ...