{"status":"public","year":"2013","place":"Seattle, Washington","abstract":[{"lang":"eng","text":"A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology with f T /f max of 300/500 GHz is presented. The receiver consists of a four stage LNA, an active power divider, an LO IQ generation network, and direct down-conversion fundamental mixers. The integrated IQ receiver yields a conversion gain of 18 dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245 GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5 V supply and 20 mA from 2 V."}],"author":[{"last_name":"Elkhouly","full_name":"Elkhouly, Mohamed","first_name":"Mohamed"},{"full_name":"Mao, Yanfei","last_name":"Mao","first_name":"Yanfei"},{"last_name":"Meliani","full_name":"Meliani, Chafik","first_name":"Chafik"},{"full_name":"Ellinger, Frank","last_name":"Ellinger","first_name":"Frank"},{"last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph","first_name":"Christoph"}],"title":"A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology","_id":"24358","department":[{"_id":"58"}],"publication_identifier":{"eisbn":["978-1-4673-6062-3"]},"user_id":"15931","citation":{"short":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seattle, Washington, 2013.","chicago":"Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.” In <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. Seattle, Washington, 2013. <a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">https://doi.org/10.1109/RFIC.2013.6569589</a>.","bibtex":"@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Seattle, Washington}, title={A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology}, DOI={<a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>}, booktitle={2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013} }","apa":"Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., &#38; Scheytt, C. (2013). A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. <a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">https://doi.org/10.1109/RFIC.2013.6569589</a>","ama":"Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. In: <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>","mla":"Elkhouly, Mohamed, et al. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.” <i>2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,</i> 2013, doi:<a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>.","ieee":"M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology,” 2013, doi: <a href=\"https://doi.org/10.1109/RFIC.2013.6569589\">10.1109/RFIC.2013.6569589</a>."},"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6569589"}]},"date_created":"2021-09-14T09:22:37Z","language":[{"iso":"eng"}],"doi":"10.1109/RFIC.2013.6569589","type":"conference","date_updated":"2022-02-17T09:05:42Z","conference":{"end_date":"2013.06.04","start_date":"2013.06.02"},"publication":"2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,"}