---
_id: '24358'
abstract:
- lang: eng
text: A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology
with f T /f max of 300/500 GHz is presented. The receiver consists of a four stage
LNA, an active power divider, an LO IQ generation network, and direct down-conversion
fundamental mixers. The integrated IQ receiver yields a conversion gain of 18
dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245
GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude
and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5
V supply and 20 mA from 2 V.
author:
- first_name: Mohamed
full_name: Elkhouly, Mohamed
last_name: Elkhouly
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Chafik
full_name: Meliani, Chafik
last_name: Meliani
- first_name: Frank
full_name: Ellinger, Frank
last_name: Ellinger
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 240 GHz Direct Conversion
IQ Receiver in 0.13 µm SiGe BiCMOS technology. In: 2013 IEEE Radio Frequency
Integrated Circuits (RFIC) Symposium,. ; 2013. doi:10.1109/RFIC.2013.6569589'
apa: Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., & Scheytt, C. (2013).
A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. 2013
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,. https://doi.org/10.1109/RFIC.2013.6569589
bibtex: '@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Seattle,
Washington}, title={A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS
technology}, DOI={10.1109/RFIC.2013.6569589},
booktitle={2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,}, author={Elkhouly,
Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph},
year={2013} }'
chicago: Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph
Scheytt. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.”
In 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,. Seattle,
Washington, 2013. https://doi.org/10.1109/RFIC.2013.6569589.
ieee: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 240 GHz
Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology,” 2013, doi: 10.1109/RFIC.2013.6569589.'
mla: Elkhouly, Mohamed, et al. “A 240 GHz Direct Conversion IQ Receiver in 0.13
Μm SiGe BiCMOS Technology.” 2013 IEEE Radio Frequency Integrated Circuits (RFIC)
Symposium, 2013, doi:10.1109/RFIC.2013.6569589.
short: 'M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: 2013 IEEE
Radio Frequency Integrated Circuits (RFIC) Symposium, Seattle, Washington, 2013.'
conference:
end_date: 2013.06.04
start_date: 2013.06.02
date_created: 2021-09-14T09:22:37Z
date_updated: 2022-02-17T09:05:42Z
department:
- _id: '58'
doi: 10.1109/RFIC.2013.6569589
language:
- iso: eng
place: Seattle, Washington
publication: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,
publication_identifier:
eisbn:
- 978-1-4673-6062-3
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6569589
status: public
title: A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology
type: conference
user_id: '15931'
year: '2013'
...