{"year":"2013","place":"Seattle, Washington","status":"public","author":[{"last_name":"Mao","full_name":"Mao, Yanfei","first_name":"Yanfei"},{"first_name":"Klaus","last_name":"Schmalz","full_name":"Schmalz, Klaus"},{"first_name":"Johannes","full_name":"Borngräber, Johannes","last_name":"Borngräber"},{"first_name":"Christoph","id":"37144","last_name":"Scheytt","full_name":"Scheytt, Christoph"},{"first_name":"Chafik","full_name":"Meliani, Chafik","last_name":"Meliani"}],"abstract":[{"text":"A subharmonic receiver for 245 GHz spectroscopy sensor applications have been proposed. The receiver consists of a CB (common base) LNA, 2 nd transconductance SHM (subharmonic mixer) and a 120 GHz push-push VCO with 1/64 divider. The receiver is fabricated in f T /f max =300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 14.3 dB at 245 GHz with tuning range of 15 GHz, and the single-side band noise figure is 19 dB. The input 1-dB compression point is at -24 dBm. The receiver dissipates a power of 200 mW.","lang":"eng"}],"_id":"24362","title":"245 GHz Subharmonic Receiver in SiGe","department":[{"_id":"58"}],"publication_identifier":{"eisbn":["978-1-4673-6176-7"]},"date_created":"2021-09-14T09:22:42Z","user_id":"15931","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6697429"}]},"citation":{"bibtex":"@inproceedings{Mao_Schmalz_Borngräber_Scheytt_Meliani_2013, place={Seattle, Washington}, title={245 GHz Subharmonic Receiver in SiGe}, DOI={<a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>}, booktitle={IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph and Meliani, Chafik}, year={2013} }","short":"Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, C. Meliani, in: IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers, Seattle, Washington, 2013.","chicago":"Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, Christoph Scheytt, and Chafik Meliani. “245 GHz Subharmonic Receiver in SiGe.” In <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>. Seattle, Washington, 2013. <a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">https://doi.org/10.1109/MWSYM.2013.6697429</a>.","ieee":"Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, and C. Meliani, “245 GHz Subharmonic Receiver in SiGe,” 2013, doi: <a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>.","mla":"Mao, Yanfei, et al. “245 GHz Subharmonic Receiver in SiGe.” <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>, 2013, doi:<a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>.","ama":"Mao Y, Schmalz K, Borngräber J, Scheytt C, Meliani C. 245 GHz Subharmonic Receiver in SiGe. In: <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>. ; 2013. doi:<a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">10.1109/MWSYM.2013.6697429</a>","apa":"Mao, Y., Schmalz, K., Borngräber, J., Scheytt, C., &#38; Meliani, C. (2013). 245 GHz Subharmonic Receiver in SiGe. <i>IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers</i>. <a href=\"https://doi.org/10.1109/MWSYM.2013.6697429\">https://doi.org/10.1109/MWSYM.2013.6697429</a>"},"language":[{"iso":"eng"}],"doi":"10.1109/MWSYM.2013.6697429","date_updated":"2022-02-17T09:23:50Z","type":"conference","publication":"IEEE International Microwave Symposium, Advances in Low Noise Amplifiers and Receivers","conference":{"end_date":"2013.06.07","start_date":"2013.06.02"}}