{"volume":59,"issue":"8","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6241407","relation":"confirmation"}]},"department":[{"_id":"58"}],"doi":"10.1109/TCSII.2012.2204118","publication":"(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering","date_created":"2021-09-14T12:59:32Z","citation":{"bibtex":"@article{Sedighi_Scheytt_2012, title={Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links}, volume={59}, DOI={<a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>}, number={8}, journal={(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering}, author={Sedighi, Behnam and Scheytt, Christoph}, year={2012}, pages={461–465} }","short":"B. Sedighi, C. Scheytt, (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering 59 (2012) 461–465.","ieee":"B. Sedighi and C. Scheytt, “Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links,” <i>(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering</i>, vol. 59, no. 8, pp. 461–465, 2012, doi: <a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>.","mla":"Sedighi, Behnam, and Christoph Scheytt. “Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links.” <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i>, vol. 59, no. 8, 2012, pp. 461–65, doi:<a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>.","chicago":"Sedighi, Behnam, and Christoph Scheytt. “Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links.” <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i> 59, no. 8 (2012): 461–65. <a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">https://doi.org/10.1109/TCSII.2012.2204118</a>.","apa":"Sedighi, B., &#38; Scheytt, C. (2012). Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links. <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i>, <i>59</i>(8), 461–465. <a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">https://doi.org/10.1109/TCSII.2012.2204118</a>","ama":"Sedighi B, Scheytt C. Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links. <i>(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering</i>. 2012;59(8):461-465. doi:<a href=\"https://doi.org/10.1109/TCSII.2012.2204118\">10.1109/TCSII.2012.2204118</a>"},"abstract":[{"lang":"eng","text":"We propose a new circuit for the realization of transimpedance amplifiers (TIAs), targeted at reducing the input-referred noise of the TIA or alternatively increasing the bandwidth, without increasing the power dissipation. An intensive theoretical analysis of the method is given. A prototype chip is fabricated in 0.25- μm SiGe BiCMOS technology. The TIA has a gain of 71 dBΩ , a bandwidth of 20.5 GHz, and an average input-referred current noise density of 18 pA/√Hz . The circuit operates from a 2.5-V supply, and power dissipation is 57 mW."}],"language":[{"iso":"eng"}],"_id":"24409","year":"2012","user_id":"15931","type":"journal_article","title":"Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links","date_updated":"2022-01-06T06:56:20Z","author":[{"full_name":"Sedighi, Behnam","first_name":"Behnam","last_name":"Sedighi"},{"full_name":"Scheytt, Christoph","last_name":"Scheytt","first_name":"Christoph","id":"37144"}],"status":"public","intvolume":"        59","page":"461-465"}