@inproceedings{24410, abstract = {{This paper reviews recent results of wireless transmitter and receiver ICs at 122 and 245 GHz in 0.13 µm SiGe BiCMOS technology together with an efficient on-chip antenna. A transmitter IC with 5 dBm output power and directional onchip power measurement for built-in-self-test is presented. A 122 GHz passive HBT diode mixer design is discussed and results are shown. The mixer exhibits superior 1/f noise performance which makes it especially suitable for FMCW/CW radar sensors. Furthermore a highly integrated 245 GHz transmitter with 1 dBm maximum output power was realized. The IC dissipates only 380 mW. A low-loss on-chip antenna for 130 GHz with 60% efficiency was implemented and measured. It uses localized backside etching techniques and allows for simplified and very cost-efficient mm-wave packaging}}, author = {{Scheytt, Christoph and Sun, Yaoming and Schmalz, Klaus and Wang, Ruoyu}}, booktitle = {{IMS 2012 (International Microwave Symposium)}}, location = {{Montreal, QC, Canada}}, title = {{{SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz}}}, doi = {{10.1109/MWSYM.2012.6259487}}, year = {{2012}}, }