{"intvolume":"        33","abstract":[{"lang":"eng","text":"We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines."}],"page":"691-693","_id":"24414","status":"public","date_updated":"2022-01-06T06:56:20Z","date_created":"2021-09-14T13:01:25Z","title":"Vertical Graphene Base Transistor","year":"2012","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6177217","relation":"confirmation"}]},"user_id":"15931","type":"journal_article","language":[{"iso":"eng"}],"publication":"(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering","citation":{"mla":"Mehr, Wolfgang, et al. “Vertical Graphene Base Transistor.” <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i>, vol. 33, no. 5, 2012, pp. 691–93, doi:<a href=\"https://doi.org/10.1109/LED.2012.2189193\">10.1109/LED.2012.2189193</a>.","short":"W. Mehr, J. Dabrowski, M.C. Lemme, G. Lippert, G. Lupina, M. Ostling, Y.-H. Xie, C. Scheytt, (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering 33 (2012) 691–693.","ama":"Mehr W, Dabrowski J, Lemme MC, et al. Vertical Graphene Base Transistor. <i>(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering</i>. 2012;33(5):691-693. doi:<a href=\"https://doi.org/10.1109/LED.2012.2189193\">10.1109/LED.2012.2189193</a>","bibtex":"@article{Mehr_Dabrowski_Lemme_Lippert_Lupina_Ostling_Xie_Scheytt_2012, title={Vertical Graphene Base Transistor}, volume={33}, DOI={<a href=\"https://doi.org/10.1109/LED.2012.2189193\">10.1109/LED.2012.2189193</a>}, number={5}, journal={(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering}, author={Mehr, Wolfgang and Dabrowski, Jarek and Lemme, Max C. and Lippert, Gunther and Lupina, Grzegorz and Ostling, Mikael and Xie, Ya-Hong and Scheytt, Christoph}, year={2012}, pages={691–693} }","apa":"Mehr, W., Dabrowski, J., Lemme, M. C., Lippert, G., Lupina, G., Ostling, M., Xie, Y.-H., &#38; Scheytt, C. (2012). Vertical Graphene Base Transistor. <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i>, <i>33</i>(5), 691–693. <a href=\"https://doi.org/10.1109/LED.2012.2189193\">https://doi.org/10.1109/LED.2012.2189193</a>","ieee":"W. Mehr <i>et al.</i>, “Vertical Graphene Base Transistor,” <i>(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering</i>, vol. 33, no. 5, pp. 691–693, 2012, doi: <a href=\"https://doi.org/10.1109/LED.2012.2189193\">10.1109/LED.2012.2189193</a>.","chicago":"Mehr, Wolfgang, Jarek Dabrowski, Max C. Lemme, Gunther Lippert, Grzegorz Lupina, Mikael Ostling, Ya-Hong Xie, and Christoph Scheytt. “Vertical Graphene Base Transistor.” <i>(Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering</i> 33, no. 5 (2012): 691–93. <a href=\"https://doi.org/10.1109/LED.2012.2189193\">https://doi.org/10.1109/LED.2012.2189193</a>."},"doi":"10.1109/LED.2012.2189193","publication_identifier":{"eissn":["1558-0563 "]},"issue":"5","volume":33,"author":[{"first_name":"Wolfgang","full_name":"Mehr, Wolfgang","last_name":"Mehr"},{"first_name":"Jarek","full_name":"Dabrowski, Jarek","last_name":"Dabrowski"},{"last_name":"Lemme","full_name":"Lemme, Max C.","first_name":"Max C."},{"full_name":"Lippert, Gunther","last_name":"Lippert","first_name":"Gunther"},{"first_name":"Grzegorz","full_name":"Lupina, Grzegorz","last_name":"Lupina"},{"first_name":"Mikael","last_name":"Ostling","full_name":"Ostling, Mikael"},{"first_name":"Ya-Hong","full_name":"Xie, Ya-Hong","last_name":"Xie"},{"id":"37144","first_name":"Christoph","last_name":"Scheytt","full_name":"Scheytt, Christoph"}],"department":[{"_id":"58"}]}