{"_id":"24416","conference":{"end_date":"14.03.2012","start_date":"12.03.2012"},"publication":"GeMIC 2012","date_created":"2021-09-14T13:01:28Z","title":"120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology","department":[{"_id":"58"}],"author":[{"last_name":"Elkhouly","full_name":"Elkhouly, Mohamed","first_name":"Mohamed"},{"first_name":"Srdjan","last_name":"Glisic","full_name":"Glisic, Srdjan"},{"first_name":"Frank","full_name":"Ellinger, Frank","last_name":"Ellinger"},{"last_name":"Scheytt","full_name":"Scheytt, Christoph","first_name":"Christoph","id":"37144"}],"type":"conference","user_id":"15931","abstract":[{"text":"This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication.","lang":"eng"}],"date_updated":"2022-01-06T06:56:20Z","page":"1-4","citation":{"apa":"Elkhouly, M., Glisic, S., Ellinger, F., &#38; Scheytt, C. (2012). 120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology. <i>GeMIC 2012</i>, 1–4.","ama":"Elkhouly M, Glisic S, Ellinger F, Scheytt C. 120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology. In: <i>GeMIC 2012</i>. ; 2012:1-4.","bibtex":"@inproceedings{Elkhouly_Glisic_Ellinger_Scheytt_2012, title={120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology}, booktitle={GeMIC 2012}, author={Elkhouly, Mohamed and Glisic, Srdjan and Ellinger, Frank and Scheytt, Christoph}, year={2012}, pages={1–4} }","ieee":"M. Elkhouly, S. Glisic, F. Ellinger, and C. Scheytt, “120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology,” in <i>GeMIC 2012</i>, 2012, pp. 1–4.","chicago":"Elkhouly, Mohamed, Srdjan Glisic, Frank Ellinger, and Christoph Scheytt. “120 GHz Phased-Array Circuits in 0.25 Μm SiGe BiCMOS Technology.” In <i>GeMIC 2012</i>, 1–4, 2012.","mla":"Elkhouly, Mohamed, et al. “120 GHz Phased-Array Circuits in 0.25 Μm SiGe BiCMOS Technology.” <i>GeMIC 2012</i>, 2012, pp. 1–4.","short":"M. Elkhouly, S. Glisic, F. Ellinger, C. Scheytt, in: GeMIC 2012, 2012, pp. 1–4."},"year":"2012","publication_identifier":{"eisbn":["978-3-9812668-4-9"]},"language":[{"iso":"eng"}],"status":"public","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6185149"}]}}