--- _id: '24416' abstract: - lang: eng text: This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication. author: - first_name: Mohamed full_name: Elkhouly, Mohamed last_name: Elkhouly - first_name: Srdjan full_name: Glisic, Srdjan last_name: Glisic - first_name: Frank full_name: Ellinger, Frank last_name: Ellinger - first_name: Christoph full_name: Scheytt, Christoph id: '37144' last_name: Scheytt citation: ama: 'Elkhouly M, Glisic S, Ellinger F, Scheytt C. 120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology. In: GeMIC 2012. ; 2012:1-4.' apa: Elkhouly, M., Glisic, S., Ellinger, F., & Scheytt, C. (2012). 120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology. GeMIC 2012, 1–4. bibtex: '@inproceedings{Elkhouly_Glisic_Ellinger_Scheytt_2012, title={120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology}, booktitle={GeMIC 2012}, author={Elkhouly, Mohamed and Glisic, Srdjan and Ellinger, Frank and Scheytt, Christoph}, year={2012}, pages={1–4} }' chicago: Elkhouly, Mohamed, Srdjan Glisic, Frank Ellinger, and Christoph Scheytt. “120 GHz Phased-Array Circuits in 0.25 Μm SiGe BiCMOS Technology.” In GeMIC 2012, 1–4, 2012. ieee: M. Elkhouly, S. Glisic, F. Ellinger, and C. Scheytt, “120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology,” in GeMIC 2012, 2012, pp. 1–4. mla: Elkhouly, Mohamed, et al. “120 GHz Phased-Array Circuits in 0.25 Μm SiGe BiCMOS Technology.” GeMIC 2012, 2012, pp. 1–4. short: 'M. Elkhouly, S. Glisic, F. Ellinger, C. Scheytt, in: GeMIC 2012, 2012, pp. 1–4.' conference: end_date: 14.03.2012 start_date: 12.03.2012 date_created: 2021-09-14T13:01:28Z date_updated: 2022-01-06T06:56:20Z department: - _id: '58' language: - iso: eng page: 1-4 publication: GeMIC 2012 publication_identifier: eisbn: - 978-3-9812668-4-9 related_material: link: - relation: confirmation url: https://ieeexplore.ieee.org/document/6185149 status: public title: 120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology type: conference user_id: '15931' year: '2012' ...