---
_id: '24416'
abstract:
- lang: eng
text: This paper describes the design of D-band phased-array circuits in 0.25 μm
technology. The first part describes the design of the passive components which
are used in the phased-array systems such as balun, Wilkinson divider and branch-line
coupler. A millimeter-wave vector-modulator is designed to support both amplitude
and phase control for beam-forming applications. In the second part the designed
circuits are integrated together to form a two channel 110-130 GHz phased-array
chip. Each channel exhibits 360° phase control with 15 dB of amplitude control
range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave
phase shifting and the low-power consumption makes it ideal for highly integrated
scalable beam-forming systems for both imaging and communication.
author:
- first_name: Mohamed
full_name: Elkhouly, Mohamed
last_name: Elkhouly
- first_name: Srdjan
full_name: Glisic, Srdjan
last_name: Glisic
- first_name: Frank
full_name: Ellinger, Frank
last_name: Ellinger
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Elkhouly M, Glisic S, Ellinger F, Scheytt C. 120 GHz phased-array circuits
in 0.25 µm SiGe BiCMOS technology. In: GeMIC 2012. ; 2012:1-4.'
apa: Elkhouly, M., Glisic, S., Ellinger, F., & Scheytt, C. (2012). 120 GHz phased-array
circuits in 0.25 µm SiGe BiCMOS technology. GeMIC 2012, 1–4.
bibtex: '@inproceedings{Elkhouly_Glisic_Ellinger_Scheytt_2012, title={120 GHz phased-array
circuits in 0.25 µm SiGe BiCMOS technology}, booktitle={GeMIC 2012}, author={Elkhouly,
Mohamed and Glisic, Srdjan and Ellinger, Frank and Scheytt, Christoph}, year={2012},
pages={1–4} }'
chicago: Elkhouly, Mohamed, Srdjan Glisic, Frank Ellinger, and Christoph Scheytt.
“120 GHz Phased-Array Circuits in 0.25 Μm SiGe BiCMOS Technology.” In GeMIC
2012, 1–4, 2012.
ieee: M. Elkhouly, S. Glisic, F. Ellinger, and C. Scheytt, “120 GHz phased-array
circuits in 0.25 µm SiGe BiCMOS technology,” in GeMIC 2012, 2012, pp. 1–4.
mla: Elkhouly, Mohamed, et al. “120 GHz Phased-Array Circuits in 0.25 Μm SiGe BiCMOS
Technology.” GeMIC 2012, 2012, pp. 1–4.
short: 'M. Elkhouly, S. Glisic, F. Ellinger, C. Scheytt, in: GeMIC 2012, 2012, pp.
1–4.'
conference:
end_date: 14.03.2012
start_date: 12.03.2012
date_created: 2021-09-14T13:01:28Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
language:
- iso: eng
page: 1-4
publication: GeMIC 2012
publication_identifier:
eisbn:
- 978-3-9812668-4-9
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6185149
status: public
title: 120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology
type: conference
user_id: '15931'
year: '2012'
...