{"page":"5-8","date_updated":"2022-01-06T06:56:20Z","type":"conference","publication":"SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)","conference":{"end_date":"18.01.2012","start_date":"16.01.2012"},"doi":"10.1109/SiRF.2012.6160120","language":[{"iso":"eng"}],"user_id":"15931","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6160120"}]},"citation":{"ama":"Mao Y, Schmalz K, Borngräber J, Scheytt C. A 245 GHz CB LNA and SHM mixer in SiGe technology. In: <i>SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)</i>. ; 2012:5-8. doi:<a href=\"https://doi.org/10.1109/SiRF.2012.6160120\">10.1109/SiRF.2012.6160120</a>","mla":"Mao, Yanfei, et al. “A 245 GHz CB LNA and SHM Mixer in SiGe Technology.” <i>SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)</i>, 2012, pp. 5–8, doi:<a href=\"https://doi.org/10.1109/SiRF.2012.6160120\">10.1109/SiRF.2012.6160120</a>.","ieee":"Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “A 245 GHz CB LNA and SHM mixer in SiGe technology,” in <i>SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)</i>, 2012, pp. 5–8, doi: <a href=\"https://doi.org/10.1109/SiRF.2012.6160120\">10.1109/SiRF.2012.6160120</a>.","apa":"Mao, Y., Schmalz, K., Borngräber, J., &#38; Scheytt, C. (2012). A 245 GHz CB LNA and SHM mixer in SiGe technology. <i>SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)</i>, 5–8. <a href=\"https://doi.org/10.1109/SiRF.2012.6160120\">https://doi.org/10.1109/SiRF.2012.6160120</a>","bibtex":"@inproceedings{Mao_Schmalz_Borngräber_Scheytt_2012, title={A 245 GHz CB LNA and SHM mixer in SiGe technology}, DOI={<a href=\"https://doi.org/10.1109/SiRF.2012.6160120\">10.1109/SiRF.2012.6160120</a>}, booktitle={SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph}, year={2012}, pages={5–8} }","short":"Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, in: SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems), 2012, pp. 5–8.","chicago":"Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt. “A 245 GHz CB LNA and SHM Mixer in SiGe Technology.” In <i>SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)</i>, 5–8, 2012. <a href=\"https://doi.org/10.1109/SiRF.2012.6160120\">https://doi.org/10.1109/SiRF.2012.6160120</a>."},"date_created":"2021-09-14T13:01:30Z","title":"A 245 GHz CB LNA and SHM mixer in SiGe technology","_id":"24418","publication_identifier":{"eisbn":["978-1-4577-1318-7"]},"department":[{"_id":"58"}],"author":[{"full_name":"Mao, Yanfei","last_name":"Mao","first_name":"Yanfei"},{"first_name":"Klaus","last_name":"Schmalz","full_name":"Schmalz, Klaus"},{"first_name":"Johannes","last_name":"Borngräber","full_name":"Borngräber, Johannes"},{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"}],"abstract":[{"lang":"eng","text":"The paper presents a four stage 245 GHz LNA in an f t /f max =280/425 GHz SiGe technology and a 4 th sub harmonic 245 GHz transconductance mixer in an f t /f max =250/300 GHz SiGe technology. The LNA takes advantage of common base (CB) topology for each stage and has 12 dB gain at 245 GHz, while exhibiting a 3 dB bandwidth of 26 GHz. It has a supply voltage of 2V and power dissipation of 28 mW. The transconductance mixer has -7 dB conversion gain at 245 GHz with an LO power of 8 dBm at 61 GHz. The mixer draws 9.8 mA at 3V. Simulation results of the receiver comprising the CB LNA and SHM mixer are given."}],"status":"public","year":"2012"}