{"language":[{"iso":"eng"}],"doi":"10.1109/SiRF.2012.6160125","type":"conference","date_updated":"2022-01-06T06:56:20Z","conference":{"start_date":"16.01.2012","end_date":"18.01.2012"},"publication":"SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)","status":"public","year":"2012","author":[{"first_name":"Benjamin","full_name":"Laemmle, Benjamin","last_name":"Laemmle"},{"first_name":"Klaus","full_name":"Schmalz, Klaus","last_name":"Schmalz"},{"first_name":"Christoph","full_name":"Scheytt, Christoph","id":"37144","last_name":"Scheytt"},{"last_name":"Kissinger","full_name":"Kissinger, Dietmar","first_name":"Dietmar"},{"full_name":"Weigel, Robert","last_name":"Weigel","first_name":"Robert"}],"abstract":[{"lang":"eng","text":"In this publication an integrated reflectometer in SiGe BiCMOS technology for sensor readout at 62 GHz is presented. The circuit includes an oscillator, a six-port reflectometer, and a dummy sensor for verification purposes. The circuit has a bandwidth of 8GHz at a center frequency of 62 GHz. It operates at 3.75V supply voltage and consumes 282 mW. The measurement principle is demonstrated and the scattering parameters of the dummy sensor are compared to measurement of a breakout circuit with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.9 mm 2 ."}],"title":"A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology","_id":"24419","publication_identifier":{"eisbn":["978-1-4577-1318-7"]},"department":[{"_id":"58"}],"user_id":"15931","related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/document/6160125"}]},"citation":{"short":"B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel, in: SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems), 2012.","apa":"Laemmle, B., Schmalz, K., Scheytt, C., Kissinger, D., &#38; Weigel, R. (2012). A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology. <i>SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)</i>. <a href=\"https://doi.org/10.1109/SiRF.2012.6160125\">https://doi.org/10.1109/SiRF.2012.6160125</a>","chicago":"Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Dietmar Kissinger, and Robert Weigel. “A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology.” In <i>SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)</i>, 2012. <a href=\"https://doi.org/10.1109/SiRF.2012.6160125\">https://doi.org/10.1109/SiRF.2012.6160125</a>.","mla":"Laemmle, Benjamin, et al. “A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology.” <i>SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)</i>, 2012, doi:<a href=\"https://doi.org/10.1109/SiRF.2012.6160125\">10.1109/SiRF.2012.6160125</a>.","bibtex":"@inproceedings{Laemmle_Schmalz_Scheytt_Kissinger_Weigel_2012, title={A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology}, DOI={<a href=\"https://doi.org/10.1109/SiRF.2012.6160125\">10.1109/SiRF.2012.6160125</a>}, booktitle={SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)}, author={Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Kissinger, Dietmar and Weigel, Robert}, year={2012} }","ama":"Laemmle B, Schmalz K, Scheytt C, Kissinger D, Weigel R. A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology. In: <i>SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)</i>. ; 2012. doi:<a href=\"https://doi.org/10.1109/SiRF.2012.6160125\">10.1109/SiRF.2012.6160125</a>","ieee":"B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, and R. Weigel, “A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology,” 2012, doi: <a href=\"https://doi.org/10.1109/SiRF.2012.6160125\">10.1109/SiRF.2012.6160125</a>."},"date_created":"2021-09-14T13:01:32Z"}