{"conference":{"end_date":"22.06.2012","start_date":"17.06.2021","location":" Montreal, QC, Canada"},"_id":"24544","date_updated":"2022-01-06T06:56:27Z","doi":"10.1109/MWSYM.2012.6259501","language":[{"iso":"eng"}],"page":"1 -3","type":"conference","year":"2012","citation":{"bibtex":"@inproceedings{Sedighi_Scheytt_2012, title={40 Gb/s VCSEL driver IC with a new output current and pre-emphasis adjustment method}, DOI={10.1109/MWSYM.2012.6259501}, booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Sedighi, Behnam and Scheytt, Christoph}, year={2012}, pages={1–3} }","mla":"Sedighi, Behnam, and Christoph Scheytt. “40 Gb/s VCSEL Driver IC with a New Output Current and Pre-Emphasis Adjustment Method.” Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3, doi:10.1109/MWSYM.2012.6259501.","apa":"Sedighi, B., & Scheytt, C. (2012). 40 Gb/s VCSEL driver IC with a new output current and pre-emphasis adjustment method. Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 1–3. https://doi.org/10.1109/MWSYM.2012.6259501","ama":"Sedighi B, Scheytt C. 40 Gb/s VCSEL driver IC with a new output current and pre-emphasis adjustment method. In: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International. ; 2012:1-3. doi:10.1109/MWSYM.2012.6259501","chicago":"Sedighi, Behnam, and Christoph Scheytt. “40 Gb/s VCSEL Driver IC with a New Output Current and Pre-Emphasis Adjustment Method.” In Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 1–3, 2012. https://doi.org/10.1109/MWSYM.2012.6259501.","ieee":"B. Sedighi and C. Scheytt, “40 Gb/s VCSEL driver IC with a new output current and pre-emphasis adjustment method,” in Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, QC, Canada, 2012, pp. 1–3, doi: 10.1109/MWSYM.2012.6259501.","short":"B. Sedighi, C. Scheytt, in: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3."},"abstract":[{"text":"Design of a 40 Gb/s VCSEL driver IC capable of providing up to 10mA current to common-cathode VCSELs is presented. Using low-power bandwidth enhancement techniques, a prototype IC is successfully developed in 180-GHz SiGe BiCMOS technology. Measured results show 34 GHz of bandwidth, open eye diagram with rise/fall time below 10 ps, and power dissipation of 130 mW.","lang":"eng"}],"related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6259501","relation":"confirmation"}]},"user_id":"15931","title":"40 Gb/s VCSEL driver IC with a new output current and pre-emphasis adjustment method","department":[{"_id":"58"}],"publication":"Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International","author":[{"last_name":"Sedighi","first_name":"Behnam","full_name":"Sedighi, Behnam"},{"last_name":"Scheytt","id":"37144","first_name":"Christoph","full_name":"Scheytt, Christoph"}],"date_created":"2021-09-16T08:29:15Z","status":"public","publication_identifier":{"eisbn":["978-1-4673-1088-8"]}}