{"author":[{"full_name":"Sedighi, Behnam","last_name":"Sedighi","first_name":"Behnam"},{"last_name":"Ostrovskyy","full_name":"Ostrovskyy, Philip","first_name":"Philip"},{"last_name":"Scheytt","id":"37144","full_name":"Scheytt, Christoph","first_name":"Christoph"},{"last_name":"Stille","full_name":"Stille, Karl Stephan Christian","first_name":"Karl Stephan Christian"},{"first_name":"Joachim","last_name":"Böcker","full_name":"Böcker, Joachim"}],"date_created":"2021-09-16T08:29:18Z","date_updated":"2022-01-06T06:56:27Z","doi":"10.1109/MWSYM.2012.6259502","title":"Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing","related_material":{"link":[{"url":"https://ieeexplore.ieee.org/document/6259502","relation":"confirmation"}]},"page":"1 -3","citation":{"ama":"Sedighi B, Ostrovskyy P, Scheytt C, Stille KSC, Böcker J. Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing. In: <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>. ; 2012:1-3. doi:<a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">10.1109/MWSYM.2012.6259502</a>","chicago":"Sedighi, Behnam, Philip Ostrovskyy, Christoph Scheytt, Karl Stephan Christian Stille, and Joachim Böcker. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output Swing.” In <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 1–3, 2012. <a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">https://doi.org/10.1109/MWSYM.2012.6259502</a>.","ieee":"B. Sedighi, P. Ostrovskyy, C. Scheytt, K. S. C. Stille, and J. Böcker, “Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing,” in <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 2012, pp. 1–3, doi: <a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">10.1109/MWSYM.2012.6259502</a>.","apa":"Sedighi, B., Ostrovskyy, P., Scheytt, C., Stille, K. S. C., &#38; Böcker, J. (2012). Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing. <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 1–3. <a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">https://doi.org/10.1109/MWSYM.2012.6259502</a>","mla":"Sedighi, Behnam, et al. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output Swing.” <i>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International</i>, 2012, pp. 1–3, doi:<a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">10.1109/MWSYM.2012.6259502</a>.","bibtex":"@inproceedings{Sedighi_Ostrovskyy_Scheytt_Stille_Böcker_2012, title={Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing}, DOI={<a href=\"https://doi.org/10.1109/MWSYM.2012.6259502\">10.1109/MWSYM.2012.6259502</a>}, booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Sedighi, Behnam and Ostrovskyy, Philip and Scheytt, Christoph and Stille, Karl Stephan Christian and Böcker, Joachim}, year={2012}, pages={1–3} }","short":"B. Sedighi, P. Ostrovskyy, C. Scheytt, K.S.C. Stille, J. Böcker, in: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3."},"year":"2012","department":[{"_id":"58"}],"user_id":"15931","_id":"24546","language":[{"iso":"eng"}],"publication":"Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International","type":"conference","status":"public","abstract":[{"lang":"eng","text":"this paper investigates low-power design of high-speed and high-swing electronic driver circuits. A method to estimate and optimize the power consumption of such driver ICs is presented. A 20-Gb/s driver circuit is fabricated in 0.25 µm SiGe BiCMOS process and an output swing of 2.5 V pp is measured. The driver consumes 0.75 W from 5 V supply."}]}