---
_id: '24546'
abstract:
- lang: eng
text: this paper investigates low-power design of high-speed and high-swing electronic
driver circuits. A method to estimate and optimize the power consumption of such
driver ICs is presented. A 20-Gb/s driver circuit is fabricated in 0.25 µm SiGe
BiCMOS process and an output swing of 2.5 V pp is measured. The driver consumes
0.75 W from 5 V supply.
author:
- first_name: Behnam
full_name: Sedighi, Behnam
last_name: Sedighi
- first_name: Philip
full_name: Ostrovskyy, Philip
last_name: Ostrovskyy
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Karl Stephan Christian
full_name: Stille, Karl Stephan Christian
last_name: Stille
- first_name: Joachim
full_name: Böcker, Joachim
last_name: Böcker
citation:
ama: 'Sedighi B, Ostrovskyy P, Scheytt C, Stille KSC, Böcker J. Low-power 20-Gb/s
SiGe BiCMOS driver with 2.5 V output swing. In: Microwave Symposium Digest
(MTT), 2012 IEEE MTT-S International. ; 2012:1-3. doi:10.1109/MWSYM.2012.6259502'
apa: Sedighi, B., Ostrovskyy, P., Scheytt, C., Stille, K. S. C., & Böcker, J.
(2012). Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing. Microwave
Symposium Digest (MTT), 2012 IEEE MTT-S International, 1–3. https://doi.org/10.1109/MWSYM.2012.6259502
bibtex: '@inproceedings{Sedighi_Ostrovskyy_Scheytt_Stille_Böcker_2012, title={Low-power
20-Gb/s SiGe BiCMOS driver with 2.5 V output swing}, DOI={10.1109/MWSYM.2012.6259502},
booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Sedighi,
Behnam and Ostrovskyy, Philip and Scheytt, Christoph and Stille, Karl Stephan
Christian and Böcker, Joachim}, year={2012}, pages={1–3} }'
chicago: Sedighi, Behnam, Philip Ostrovskyy, Christoph Scheytt, Karl Stephan Christian
Stille, and Joachim Böcker. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output
Swing.” In Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International,
1–3, 2012. https://doi.org/10.1109/MWSYM.2012.6259502.
ieee: 'B. Sedighi, P. Ostrovskyy, C. Scheytt, K. S. C. Stille, and J. Böcker, “Low-power
20-Gb/s SiGe BiCMOS driver with 2.5 V output swing,” in Microwave Symposium
Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3, doi: 10.1109/MWSYM.2012.6259502.'
mla: Sedighi, Behnam, et al. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output
Swing.” Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International,
2012, pp. 1–3, doi:10.1109/MWSYM.2012.6259502.
short: 'B. Sedighi, P. Ostrovskyy, C. Scheytt, K.S.C. Stille, J. Böcker, in: Microwave
Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3.'
date_created: 2021-09-16T08:29:18Z
date_updated: 2022-01-06T06:56:27Z
department:
- _id: '58'
doi: 10.1109/MWSYM.2012.6259502
language:
- iso: eng
page: 1 -3
publication: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6259502
status: public
title: Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing
type: conference
user_id: '15931'
year: '2012'
...