--- _id: '24546' abstract: - lang: eng text: this paper investigates low-power design of high-speed and high-swing electronic driver circuits. A method to estimate and optimize the power consumption of such driver ICs is presented. A 20-Gb/s driver circuit is fabricated in 0.25 µm SiGe BiCMOS process and an output swing of 2.5 V pp is measured. The driver consumes 0.75 W from 5 V supply. author: - first_name: Behnam full_name: Sedighi, Behnam last_name: Sedighi - first_name: Philip full_name: Ostrovskyy, Philip last_name: Ostrovskyy - first_name: Christoph full_name: Scheytt, Christoph id: '37144' last_name: Scheytt - first_name: Karl Stephan Christian full_name: Stille, Karl Stephan Christian last_name: Stille - first_name: Joachim full_name: Böcker, Joachim last_name: Böcker citation: ama: 'Sedighi B, Ostrovskyy P, Scheytt C, Stille KSC, Böcker J. Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing. In: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International. ; 2012:1-3. doi:10.1109/MWSYM.2012.6259502' apa: Sedighi, B., Ostrovskyy, P., Scheytt, C., Stille, K. S. C., & Böcker, J. (2012). Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing. Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 1–3. https://doi.org/10.1109/MWSYM.2012.6259502 bibtex: '@inproceedings{Sedighi_Ostrovskyy_Scheytt_Stille_Böcker_2012, title={Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing}, DOI={10.1109/MWSYM.2012.6259502}, booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Sedighi, Behnam and Ostrovskyy, Philip and Scheytt, Christoph and Stille, Karl Stephan Christian and Böcker, Joachim}, year={2012}, pages={1–3} }' chicago: Sedighi, Behnam, Philip Ostrovskyy, Christoph Scheytt, Karl Stephan Christian Stille, and Joachim Böcker. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output Swing.” In Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 1–3, 2012. https://doi.org/10.1109/MWSYM.2012.6259502. ieee: 'B. Sedighi, P. Ostrovskyy, C. Scheytt, K. S. C. Stille, and J. Böcker, “Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing,” in Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3, doi: 10.1109/MWSYM.2012.6259502.' mla: Sedighi, Behnam, et al. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output Swing.” Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3, doi:10.1109/MWSYM.2012.6259502. short: 'B. Sedighi, P. Ostrovskyy, C. Scheytt, K.S.C. Stille, J. Böcker, in: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3.' date_created: 2021-09-16T08:29:18Z date_updated: 2022-01-06T06:56:27Z department: - _id: '58' doi: 10.1109/MWSYM.2012.6259502 language: - iso: eng page: 1 -3 publication: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International related_material: link: - relation: confirmation url: https://ieeexplore.ieee.org/document/6259502 status: public title: Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing type: conference user_id: '15931' year: '2012' ...