{"publication_identifier":{"issn":["0003-3804","1521-3889"]},"intvolume":"        18","_id":"24980","year":"2010","author":[{"first_name":"N.","last_name":"Gögh","full_name":"Gögh, N."},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"},{"full_name":"Kuznetsova, I.","last_name":"Kuznetsova","first_name":"I."},{"last_name":"Meier","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","id":"344","first_name":"Torsten"},{"first_name":"I.","full_name":"Varga, I.","last_name":"Varga"}],"status":"public","issue":"12","publication":"Annalen der Physik","date_created":"2021-09-24T08:06:30Z","page":"905-909","type":"journal_article","doi":"10.1002/andp.20095211219","abstract":[{"lang":"eng","text":"We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials."}],"volume":18,"language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2023-04-19T11:13:00Z","title":"Localization of excitons in weakly disordered semiconductor structures: A model study","citation":{"apa":"Gögh, N., Thomas, P., Kuznetsova, I., Meier, T., &#38; Varga, I. (2010). Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen Der Physik</i>, <i>18</i>(12), 905–909. <a href=\"https://doi.org/10.1002/andp.20095211219\">https://doi.org/10.1002/andp.20095211219</a>","ieee":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, and I. Varga, “Localization of excitons in weakly disordered semiconductor structures: A model study,” <i>Annalen der Physik</i>, vol. 18, no. 12, pp. 905–909, 2010, doi: <a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>.","mla":"Gögh, N., et al. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i>, vol. 18, no. 12, 2010, pp. 905–09, doi:<a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>.","chicago":"Gögh, N., P. Thomas, I. Kuznetsova, Torsten Meier, and I. Varga. “Localization of Excitons in Weakly Disordered Semiconductor Structures: A Model Study.” <i>Annalen Der Physik</i> 18, no. 12 (2010): 905–9. <a href=\"https://doi.org/10.1002/andp.20095211219\">https://doi.org/10.1002/andp.20095211219</a>.","bibtex":"@article{Gögh_Thomas_Kuznetsova_Meier_Varga_2010, title={Localization of excitons in weakly disordered semiconductor structures: A model study}, volume={18}, DOI={<a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>}, number={12}, journal={Annalen der Physik}, author={Gögh, N. and Thomas, P. and Kuznetsova, I. and Meier, Torsten and Varga, I.}, year={2010}, pages={905–909} }","ama":"Gögh N, Thomas P, Kuznetsova I, Meier T, Varga I. Localization of excitons in weakly disordered semiconductor structures: A model study. <i>Annalen der Physik</i>. 2010;18(12):905-909. doi:<a href=\"https://doi.org/10.1002/andp.20095211219\">10.1002/andp.20095211219</a>","short":"N. Gögh, P. Thomas, I. Kuznetsova, T. Meier, I. Varga, Annalen Der Physik 18 (2010) 905–909."},"user_id":"49063","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}]}