---
res:
  bibo_abstract:
  - This paper investigates an ultra-broadband sampling technique based on charge
    sampling using an Integrate-and-Hold Circuit (IHC) and ultra-short integration
    times. The charge sampling technique is mathematically analyzed in detail and
    compared to conventional switched-capacitor sampling. The mathematical analysis
    allows to predict the sampler bandwidth as well as the degradation of sampling
    precision due to analog circuit impairments such as integrator gain error, integration
    capacitor leakage, hold-mode droop, thermal noise, and clock jitter. Furthermore,
    design, simulation, and measurement results of an ultra-broadband charge sampler
    IC in SiGe BiCMOS technology are presented. The charge sampler IC achieves a 1dB
    bandwidth of 70 GHz. A resolution of better than 5.9 effective number of bits
    (ENOB) is measured from 0 to 70 GHz at a sampling rate of 5 GS/s. The results
    suggest that charge sampling using an IHC is a viable concept for ultra-broadband
    sampling.@eng
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: Liang
      foaf_name: Wu, Liang
      foaf_surname: Wu
      foaf_workInfoHomepage: http://www.librecat.org/personId=30401
  - foaf_Person:
      foaf_givenName: J. Christoph
      foaf_name: Scheytt, J. Christoph
      foaf_surname: Scheytt
      foaf_workInfoHomepage: http://www.librecat.org/personId=37144
  bibo_doi: 10.1109/tcsi.2021.3094428
  bibo_issue: '9'
  bibo_volume: 68
  dct_date: 2021^xs_gYear
  dct_isPartOf:
  - http://id.crossref.org/issn/1549-8328
  - http://id.crossref.org/issn/1558-0806
  dct_language: eng
  dct_publisher: Institute of Electrical and Electronics Engineers (IEEE)@
  dct_subject:
  - Electrical and Electronic Engineering
  dct_title: Analysis and Design of a Charge Sampler With 70-GHz 1-dB Bandwidth in
    130-nm SiGe BiCMOS@
...