{"doi":"10.1109/BCICTS50416.2021.9682207","_id":"29213","author":[{"full_name":"Iftekhar, Mohammed","last_name":"Iftekhar","first_name":"Mohammed","id":"47944"},{"last_name":"Gudyriev","full_name":"Gudyriev, Sergiy","first_name":"Sergiy"},{"first_name":"J. Christoph","id":"37144","full_name":"Scheytt, J. Christoph","last_name":"Scheytt"}],"department":[{"_id":"58"}],"title":"Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents","type":"conference","publication":"The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium","date_created":"2022-01-11T07:23:37Z","abstract":[{"lang":"eng","text":"This paper presents a technique to extend the frequency acquisition range for bang-bang phase-detector-based clock and data recovery (CDR) circuits without an additional frequency acquisition loop or lock detection circuit. The per-manent modulation of the offset current in the CDR's integral branch enhances the acquisition range by nearly 4 times, covering the entire tuning range of the voltage controlled oscillator. The increase in power dissipation and the chip area are negligible. This technique was implemented and measured in a 28 Gbps NRZ bang-bang CDR chip to confirm the working principle. In addition to the increased acquisition range, the CDR also surpasses jitter related specifications from the OIF CEI-28G-VSR standard."}],"user_id":"15931","date_updated":"2022-02-07T13:21:25Z","citation":{"short":"M. Iftekhar, S. Gudyriev, J.C. Scheytt, in: The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021.","ieee":"M. Iftekhar, S. Gudyriev, and J. C. Scheytt, “Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents,” 2021, doi: <a href=\"https://doi.org/10.1109/BCICTS50416.2021.9682207\">10.1109/BCICTS50416.2021.9682207</a>.","bibtex":"@inproceedings{Iftekhar_Gudyriev_Scheytt_2021, title={Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents}, DOI={<a href=\"https://doi.org/10.1109/BCICTS50416.2021.9682207\">10.1109/BCICTS50416.2021.9682207</a>}, booktitle={The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium}, author={Iftekhar, Mohammed and Gudyriev, Sergiy and Scheytt, J. Christoph}, year={2021} }","mla":"Iftekhar, Mohammed, et al. “Reference-Less Bang-Bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents.” <i>The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium</i>, 2021, doi:<a href=\"https://doi.org/10.1109/BCICTS50416.2021.9682207\">10.1109/BCICTS50416.2021.9682207</a>.","chicago":"Iftekhar, Mohammed, Sergiy Gudyriev, and J. Christoph Scheytt. “Reference-Less Bang-Bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents.” In <i>The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium</i>, 2021. <a href=\"https://doi.org/10.1109/BCICTS50416.2021.9682207\">https://doi.org/10.1109/BCICTS50416.2021.9682207</a>.","ama":"Iftekhar M, Gudyriev S, Scheytt JC. Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents. In: <i>The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium</i>. ; 2021. doi:<a href=\"https://doi.org/10.1109/BCICTS50416.2021.9682207\">10.1109/BCICTS50416.2021.9682207</a>","apa":"Iftekhar, M., Gudyriev, S., &#38; Scheytt, J. C. (2021). Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents. <i>The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium</i>. <a href=\"https://doi.org/10.1109/BCICTS50416.2021.9682207\">https://doi.org/10.1109/BCICTS50416.2021.9682207</a>"},"year":"2021","language":[{"iso":"eng"}],"related_material":{"link":[{"relation":"confirmation","url":"https://ieeexplore.ieee.org/abstract/document/9682207"}]},"status":"public"}