{"date_created":"2022-03-28T08:06:11Z","user_id":"66","citation":{"mla":"Bolte, Sven, et al. “Comparison of the Performance of Gallium Nitride (GaN) Transistors in a Totem-Pole Power Factor Controlled (PFC) Rectifier.” <i>2016 IEEE International Telecommunications Energy Conference (INTELEC)</i>, IEEE, 2016, doi:<a href=\"https://doi.org/10.1109/intlec.2016.7749113\">10.1109/intlec.2016.7749113</a>.","ama":"Bolte S, Fröhleke N, Böcker J. Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier. In: <i>2016 IEEE International Telecommunications Energy Conference (INTELEC)</i>. IEEE; 2016. doi:<a href=\"https://doi.org/10.1109/intlec.2016.7749113\">10.1109/intlec.2016.7749113</a>","bibtex":"@inproceedings{Bolte_Fröhleke_Böcker_2016, title={Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier}, DOI={<a href=\"https://doi.org/10.1109/intlec.2016.7749113\">10.1109/intlec.2016.7749113</a>}, booktitle={2016 IEEE International Telecommunications Energy Conference (INTELEC)}, publisher={IEEE}, author={Bolte, Sven and Fröhleke, Norbert and Böcker, Joachim}, year={2016} }","ieee":"S. Bolte, N. Fröhleke, and J. Böcker, “Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier,” 2016, doi: <a href=\"https://doi.org/10.1109/intlec.2016.7749113\">10.1109/intlec.2016.7749113</a>.","short":"S. Bolte, N. Fröhleke, J. Böcker, in: 2016 IEEE International Telecommunications Energy Conference (INTELEC), IEEE, 2016.","apa":"Bolte, S., Fröhleke, N., &#38; Böcker, J. (2016). Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier. <i>2016 IEEE International Telecommunications Energy Conference (INTELEC)</i>. <a href=\"https://doi.org/10.1109/intlec.2016.7749113\">https://doi.org/10.1109/intlec.2016.7749113</a>","chicago":"Bolte, Sven, Norbert Fröhleke, and Joachim Böcker. “Comparison of the Performance of Gallium Nitride (GaN) Transistors in a Totem-Pole Power Factor Controlled (PFC) Rectifier.” In <i>2016 IEEE International Telecommunications Energy Conference (INTELEC)</i>. IEEE, 2016. <a href=\"https://doi.org/10.1109/intlec.2016.7749113\">https://doi.org/10.1109/intlec.2016.7749113</a>."},"_id":"30617","title":"Comparison of the performance of gallium nitride (GaN) transistors in a totem-pole power factor controlled (PFC) rectifier","department":[{"_id":"52"}],"author":[{"first_name":"Sven","full_name":"Bolte, Sven","last_name":"Bolte"},{"first_name":"Norbert","last_name":"Fröhleke","full_name":"Fröhleke, Norbert"},{"first_name":"Joachim","orcid":"0000-0002-8480-7295","last_name":"Böcker","id":"66","full_name":"Böcker, Joachim"}],"publisher":"IEEE","year":"2016","status":"public","type":"conference","date_updated":"2022-03-28T08:19:34Z","publication":"2016 IEEE International Telecommunications Energy Conference (INTELEC)","doi":"10.1109/intlec.2016.7749113","publication_status":"published","language":[{"iso":"eng"}]}