{"volume":593,"publication_identifier":{"issn":["0022-0248"]},"type":"journal_article","date_updated":"2022-06-23T06:18:32Z","intvolume":"       593","date_created":"2022-06-23T06:17:32Z","publication_status":"published","doi":"10.1016/j.jcrysgro.2022.126756","language":[{"iso":"eng"}],"author":[{"first_name":"T.","full_name":"Henksmeier, T.","last_name":"Henksmeier"},{"full_name":"Schulz, J.F.","last_name":"Schulz","first_name":"J.F."},{"first_name":"E.","full_name":"Kluth, E.","last_name":"Kluth"},{"first_name":"M.","full_name":"Feneberg, M.","last_name":"Feneberg"},{"first_name":"R.","full_name":"Goldhahn, R.","last_name":"Goldhahn"},{"last_name":"Sanchez","full_name":"Sanchez, A.M.","first_name":"A.M."},{"full_name":"Voigt, M.","last_name":"Voigt","first_name":"M."},{"first_name":"Guido","id":"194","full_name":"Grundmeier, Guido","last_name":"Grundmeier"},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"}],"status":"public","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","publication":"Journal of Crystal Growth","publisher":"Elsevier BV","article_number":"126756","year":"2022","citation":{"bibtex":"@article{Henksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022, title={Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates}, volume={593}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>}, number={126756}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Henksmeier, T. and Schulz, J.F. and Kluth, E. and Feneberg, M. and Goldhahn, R. and Sanchez, A.M. and Voigt, M. and Grundmeier, Guido and Reuter, Dirk}, year={2022} }","mla":"Henksmeier, T., et al. “Remote Epitaxy of InxGa1-XAs (0 0 1) on Graphene Covered GaAs(0 0 1) Substrates.” <i>Journal of Crystal Growth</i>, vol. 593, 126756, Elsevier BV, 2022, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>.","ieee":"T. Henksmeier <i>et al.</i>, “Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates,” <i>Journal of Crystal Growth</i>, vol. 593, Art. no. 126756, 2022, doi: <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>.","ama":"Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates. <i>Journal of Crystal Growth</i>. 2022;593. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>","apa":"Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sanchez, A. M., Voigt, M., Grundmeier, G., &#38; Reuter, D. (2022). Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates. <i>Journal of Crystal Growth</i>, <i>593</i>, Article 126756. <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>","chicago":"Henksmeier, T., J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, Guido Grundmeier, and Dirk Reuter. “Remote Epitaxy of InxGa1-XAs (0 0 1) on Graphene Covered GaAs(0 0 1) Substrates.” <i>Journal of Crystal Growth</i> 593 (2022). <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>.","short":"T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022)."},"title":"Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates","_id":"32108","keyword":["Materials Chemistry","Inorganic Chemistry","Condensed Matter Physics"]}