{"issue":"18","keyword":["General Physics and Astronomy"],"author":[{"id":"36950","first_name":"Thomas","full_name":"Riedl, Thomas","last_name":"Riedl"},{"full_name":"Kunnathully, Vinay S.","last_name":"Kunnathully","first_name":"Vinay S."},{"id":"72998","full_name":"Verma, Akshay Kumar","last_name":"Verma","first_name":"Akshay Kumar"},{"last_name":"Langer","full_name":"Langer, Timo","first_name":"Timo"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Büker, Björn","last_name":"Büker","first_name":"Björn"},{"full_name":"Hütten, Andreas","last_name":"Hütten","first_name":"Andreas"},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"}],"year":"2022","language":[{"iso":"eng"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"_id":"34056","type":"journal_article","publisher":"AIP Publishing","department":[{"_id":"15"},{"_id":"230"}],"date_updated":"2023-01-10T12:08:26Z","date_created":"2022-11-10T14:19:21Z","status":"public","intvolume":" 132","user_id":"77496","citation":{"short":"T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A. Hütten, J. Lindner, Journal of Applied Physics 132 (2022).","ama":"Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics. 2022;132(18). doi:10.1063/5.0121559","chicago":"Riedl, Thomas, Vinay S. Kunnathully, Akshay Kumar Verma, Timo Langer, Dirk Reuter, Björn Büker, Andreas Hütten, and Jörg Lindner. “Selective Area Heteroepitaxy of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics 132, no. 18 (2022). https://doi.org/10.1063/5.0121559.","mla":"Riedl, Thomas, et al. “Selective Area Heteroepitaxy of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics, vol. 132, no. 18, 185701, AIP Publishing, 2022, doi:10.1063/5.0121559.","apa":"Riedl, T., Kunnathully, V. S., Verma, A. K., Langer, T., Reuter, D., Büker, B., Hütten, A., & Lindner, J. (2022). Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics, 132(18), Article 185701. https://doi.org/10.1063/5.0121559","bibtex":"@article{Riedl_Kunnathully_Verma_Langer_Reuter_Büker_Hütten_Lindner_2022, title={Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A}, volume={132}, DOI={10.1063/5.0121559}, number={18185701}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Riedl, Thomas and Kunnathully, Vinay S. and Verma, Akshay Kumar and Langer, Timo and Reuter, Dirk and Büker, Björn and Hütten, Andreas and Lindner, Jörg}, year={2022} }","ieee":"T. Riedl et al., “Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A,” Journal of Applied Physics, vol. 132, no. 18, Art. no. 185701, 2022, doi: 10.1063/5.0121559."},"article_number":"185701","doi":"10.1063/5.0121559","publication_status":"published","volume":132,"title":"Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A","publication":"Journal of Applied Physics","abstract":[{"lang":"eng","text":" A process sequence enabling the large-area fabrication of nanopillar-patterned semiconductor templates for selective-area heteroepitaxy is developed. Herein, the nanopillar tops surrounded by a SiNx mask film serve as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such patterned GaAs[Formula: see text]A templates is investigated by means of electron microscopy. It is found that defect-free nanoscale InAs islands grow selectively on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular dark-field scanning transmission electron microscopy imaging reveals that for a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite phase arms extending along the lateral [Formula: see text] directions from the central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed vapor–liquid–solid growth on [Formula: see text] B facets, which leads to a kinetically induced preference for the nucleation of the wurtzite phase driven by the local, instantaneous V/III ratio, and to a concomitant reduction of surface energy of the nanoscale diameter arms. "}]}