{"publication_status":"published","date_created":"2022-11-10T14:19:21Z","doi":"10.1063/5.0121559","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"last_name":"Riedl","full_name":"Riedl, Thomas","first_name":"Thomas","id":"36950"},{"first_name":"Vinay S.","last_name":"Kunnathully","full_name":"Kunnathully, Vinay S."},{"full_name":"Verma, Akshay Kumar","last_name":"Verma","id":"72998","first_name":"Akshay Kumar"},{"first_name":"Timo","last_name":"Langer","full_name":"Langer, Timo"},{"first_name":"Dirk","id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk"},{"full_name":"Büker, Björn","last_name":"Büker","first_name":"Björn"},{"first_name":"Andreas","last_name":"Hütten","full_name":"Hütten, Andreas"},{"last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797","first_name":"Jörg"}],"volume":132,"department":[{"_id":"15"},{"_id":"230"}],"issue":"18","intvolume":"       132","date_updated":"2023-01-10T12:08:26Z","title":"Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A","abstract":[{"text":"<jats:p> A process sequence enabling the large-area fabrication of nanopillar-patterned semiconductor templates for selective-area heteroepitaxy is developed. Herein, the nanopillar tops surrounded by a SiN<jats:sub>x</jats:sub> mask film serve as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such patterned GaAs[Formula: see text]A templates is investigated by means of electron microscopy. It is found that defect-free nanoscale InAs islands grow selectively on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular dark-field scanning transmission electron microscopy imaging reveals that for a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite phase arms extending along the lateral [Formula: see text] directions from the central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed vapor–liquid–solid growth on [Formula: see text] B facets, which leads to a kinetically induced preference for the nucleation of the wurtzite phase driven by the local, instantaneous V/III ratio, and to a concomitant reduction of surface energy of the nanoscale diameter arms. </jats:p>","lang":"eng"}],"status":"public","_id":"34056","user_id":"77496","year":"2022","type":"journal_article","keyword":["General Physics and Astronomy"],"publisher":"AIP Publishing","citation":{"ama":"Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. <i>Journal of Applied Physics</i>. 2022;132(18). doi:<a href=\"https://doi.org/10.1063/5.0121559\">10.1063/5.0121559</a>","bibtex":"@article{Riedl_Kunnathully_Verma_Langer_Reuter_Büker_Hütten_Lindner_2022, title={Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A}, volume={132}, DOI={<a href=\"https://doi.org/10.1063/5.0121559\">10.1063/5.0121559</a>}, number={18185701}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Riedl, Thomas and Kunnathully, Vinay S. and Verma, Akshay Kumar and Langer, Timo and Reuter, Dirk and Büker, Björn and Hütten, Andreas and Lindner, Jörg}, year={2022} }","apa":"Riedl, T., Kunnathully, V. S., Verma, A. K., Langer, T., Reuter, D., Büker, B., Hütten, A., &#38; Lindner, J. (2022). Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. <i>Journal of Applied Physics</i>, <i>132</i>(18), Article 185701. <a href=\"https://doi.org/10.1063/5.0121559\">https://doi.org/10.1063/5.0121559</a>","ieee":"T. Riedl <i>et al.</i>, “Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A,” <i>Journal of Applied Physics</i>, vol. 132, no. 18, Art. no. 185701, 2022, doi: <a href=\"https://doi.org/10.1063/5.0121559\">10.1063/5.0121559</a>.","mla":"Riedl, Thomas, et al. “Selective Area Heteroepitaxy of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” <i>Journal of Applied Physics</i>, vol. 132, no. 18, 185701, AIP Publishing, 2022, doi:<a href=\"https://doi.org/10.1063/5.0121559\">10.1063/5.0121559</a>.","short":"T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A. Hütten, J. Lindner, Journal of Applied Physics 132 (2022).","chicago":"Riedl, Thomas, Vinay S. Kunnathully, Akshay Kumar Verma, Timo Langer, Dirk Reuter, Björn Büker, Andreas Hütten, and Jörg Lindner. “Selective Area Heteroepitaxy of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” <i>Journal of Applied Physics</i> 132, no. 18 (2022). <a href=\"https://doi.org/10.1063/5.0121559\">https://doi.org/10.1063/5.0121559</a>."},"article_number":"185701","language":[{"iso":"eng"}],"publication":"Journal of Applied Physics"}