{"status":"public","year":"2020","title":"Applicability of molecular statics simulation to partial dislocations in GaAs","date_created":"2022-11-15T14:17:36Z","keyword":["Materials Chemistry","Condensed Matter Physics","General Chemistry"],"publication_identifier":{"issn":["0038-1098"]},"publication":"Solid State Communications","_id":"34089","language":[{"iso":"eng"}],"type":"journal_article","article_number":"113927","author":[{"last_name":"Riedl","id":"36950","full_name":"Riedl, Thomas","first_name":"Thomas"},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"}],"publication_status":"published","date_updated":"2023-01-10T12:13:23Z","volume":"314-315","user_id":"77496","department":[{"_id":"15"},{"_id":"230"}],"doi":"10.1016/j.ssc.2020.113927","publisher":"Elsevier BV","citation":{"ama":"Riedl T, Lindner J. Applicability of molecular statics simulation to partial dislocations in GaAs. Solid State Communications. 2020;314-315. doi:10.1016/j.ssc.2020.113927","mla":"Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” Solid State Communications, vol. 314–315, 113927, Elsevier BV, 2020, doi:10.1016/j.ssc.2020.113927.","chicago":"Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” Solid State Communications 314–315 (2020). https://doi.org/10.1016/j.ssc.2020.113927.","short":"T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).","bibtex":"@article{Riedl_Lindner_2020, title={Applicability of molecular statics simulation to partial dislocations in GaAs}, volume={314–315}, DOI={10.1016/j.ssc.2020.113927}, number={113927}, journal={Solid State Communications}, publisher={Elsevier BV}, author={Riedl, Thomas and Lindner, Jörg}, year={2020} }","apa":"Riedl, T., & Lindner, J. (2020). Applicability of molecular statics simulation to partial dislocations in GaAs. Solid State Communications, 314–315, Article 113927. https://doi.org/10.1016/j.ssc.2020.113927","ieee":"T. Riedl and J. Lindner, “Applicability of molecular statics simulation to partial dislocations in GaAs,” Solid State Communications, vol. 314–315, Art. no. 113927, 2020, doi: 10.1016/j.ssc.2020.113927."}}