{"keyword":["Materials Chemistry","Condensed Matter Physics","General Chemistry"],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2022-11-15T14:18:42Z","publication":"Solid State Communications","citation":{"chicago":"Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” <i>Solid State Communications</i> 314–315 (2020). <a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">https://doi.org/10.1016/j.ssc.2020.113927</a>.","short":"T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).","ieee":"T. Riedl and J. Lindner, “Applicability of molecular statics simulation to partial dislocations in GaAs,” <i>Solid State Communications</i>, vol. 314–315, Art. no. 113927, 2020, doi: <a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">10.1016/j.ssc.2020.113927</a>.","apa":"Riedl, T., &#38; Lindner, J. (2020). Applicability of molecular statics simulation to partial dislocations in GaAs. <i>Solid State Communications</i>, <i>314–315</i>, Article 113927. <a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">https://doi.org/10.1016/j.ssc.2020.113927</a>","bibtex":"@article{Riedl_Lindner_2020, title={Applicability of molecular statics simulation to partial dislocations in GaAs}, volume={314–315}, DOI={<a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">10.1016/j.ssc.2020.113927</a>}, number={113927}, journal={Solid State Communications}, publisher={Elsevier BV}, author={Riedl, Thomas and Lindner, Jörg}, year={2020} }","ama":"Riedl T, Lindner J. Applicability of molecular statics simulation to partial dislocations in GaAs. <i>Solid State Communications</i>. 2020;314-315. doi:<a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">10.1016/j.ssc.2020.113927</a>","mla":"Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” <i>Solid State Communications</i>, vol. 314–315, 113927, Elsevier BV, 2020, doi:<a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">10.1016/j.ssc.2020.113927</a>."},"doi":"10.1016/j.ssc.2020.113927","user_id":"77496","volume":"314-315","article_number":"113927","_id":"34090","language":[{"iso":"eng"}],"publisher":"Elsevier BV","date_updated":"2023-01-10T12:13:46Z","publication_status":"published","status":"public","year":"2020","title":"Applicability of molecular statics simulation to partial dislocations in GaAs","publication_identifier":{"issn":["0038-1098"]},"author":[{"full_name":"Riedl, Thomas","last_name":"Riedl","first_name":"Thomas","id":"36950"},{"full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg","id":"20797"}]}