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<titleInfo><title>Applicability of molecular statics simulation to partial dislocations in GaAs</title></titleInfo>


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  <namePart type="given">Thomas</namePart>
  <namePart type="family">Riedl</namePart>
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  <namePart type="given">Jörg</namePart>
  <namePart type="family">Lindner</namePart>
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<originInfo><publisher>Elsevier BV</publisher><dateIssued encoding="w3cdtf">2020</dateIssued>
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<language><languageTerm authority="iso639-2b" type="code">eng</languageTerm>
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<subject><topic>Materials Chemistry</topic><topic>Condensed Matter Physics</topic><topic>General Chemistry</topic>
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<relatedItem type="host"><titleInfo><title>Solid State Communications</title></titleInfo>
  <identifier type="issn">0038-1098</identifier><identifier type="doi">10.1016/j.ssc.2020.113927</identifier>
<part><detail type="volume"><number>314-315</number></detail>
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<short>T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).</short>
<chicago>Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” &lt;i&gt;Solid State Communications&lt;/i&gt; 314–315 (2020). &lt;a href=&quot;https://doi.org/10.1016/j.ssc.2020.113927&quot;&gt;https://doi.org/10.1016/j.ssc.2020.113927&lt;/a&gt;.</chicago>
<apa>Riedl, T., &amp;#38; Lindner, J. (2020). Applicability of molecular statics simulation to partial dislocations in GaAs. &lt;i&gt;Solid State Communications&lt;/i&gt;, &lt;i&gt;314–315&lt;/i&gt;, Article 113927. &lt;a href=&quot;https://doi.org/10.1016/j.ssc.2020.113927&quot;&gt;https://doi.org/10.1016/j.ssc.2020.113927&lt;/a&gt;</apa>
<ieee>T. Riedl and J. Lindner, “Applicability of molecular statics simulation to partial dislocations in GaAs,” &lt;i&gt;Solid State Communications&lt;/i&gt;, vol. 314–315, Art. no. 113927, 2020, doi: &lt;a href=&quot;https://doi.org/10.1016/j.ssc.2020.113927&quot;&gt;10.1016/j.ssc.2020.113927&lt;/a&gt;.</ieee>
<ama>Riedl T, Lindner J. Applicability of molecular statics simulation to partial dislocations in GaAs. &lt;i&gt;Solid State Communications&lt;/i&gt;. 2020;314-315. doi:&lt;a href=&quot;https://doi.org/10.1016/j.ssc.2020.113927&quot;&gt;10.1016/j.ssc.2020.113927&lt;/a&gt;</ama>
<bibtex>@article{Riedl_Lindner_2020, title={Applicability of molecular statics simulation to partial dislocations in GaAs}, volume={314–315}, DOI={&lt;a href=&quot;https://doi.org/10.1016/j.ssc.2020.113927&quot;&gt;10.1016/j.ssc.2020.113927&lt;/a&gt;}, number={113927}, journal={Solid State Communications}, publisher={Elsevier BV}, author={Riedl, Thomas and Lindner, Jörg}, year={2020} }</bibtex>
<mla>Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” &lt;i&gt;Solid State Communications&lt;/i&gt;, vol. 314–315, 113927, Elsevier BV, 2020, doi:&lt;a href=&quot;https://doi.org/10.1016/j.ssc.2020.113927&quot;&gt;10.1016/j.ssc.2020.113927&lt;/a&gt;.</mla>
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