---
_id: '34090'
article_number: '113927'
author:
- first_name: Thomas
  full_name: Riedl, Thomas
  id: '36950'
  last_name: Riedl
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
citation:
  ama: Riedl T, Lindner J. Applicability of molecular statics simulation to partial
    dislocations in GaAs. <i>Solid State Communications</i>. 2020;314-315. doi:<a
    href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>
  apa: Riedl, T., &#38; Lindner, J. (2020). Applicability of molecular statics simulation
    to partial dislocations in GaAs. <i>Solid State Communications</i>, <i>314–315</i>,
    Article 113927. <a href="https://doi.org/10.1016/j.ssc.2020.113927">https://doi.org/10.1016/j.ssc.2020.113927</a>
  bibtex: '@article{Riedl_Lindner_2020, title={Applicability of molecular statics
    simulation to partial dislocations in GaAs}, volume={314–315}, DOI={<a href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>},
    number={113927}, journal={Solid State Communications}, publisher={Elsevier BV},
    author={Riedl, Thomas and Lindner, Jörg}, year={2020} }'
  chicago: Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation
    to Partial Dislocations in GaAs.” <i>Solid State Communications</i> 314–315 (2020).
    <a href="https://doi.org/10.1016/j.ssc.2020.113927">https://doi.org/10.1016/j.ssc.2020.113927</a>.
  ieee: 'T. Riedl and J. Lindner, “Applicability of molecular statics simulation to
    partial dislocations in GaAs,” <i>Solid State Communications</i>, vol. 314–315,
    Art. no. 113927, 2020, doi: <a href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>.'
  mla: Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation
    to Partial Dislocations in GaAs.” <i>Solid State Communications</i>, vol. 314–315,
    113927, Elsevier BV, 2020, doi:<a href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>.
  short: T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).
date_created: 2022-11-15T14:18:42Z
date_updated: 2023-01-10T12:13:46Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.ssc.2020.113927
keyword:
- Materials Chemistry
- Condensed Matter Physics
- General Chemistry
language:
- iso: eng
publication: Solid State Communications
publication_identifier:
  issn:
  - 0038-1098
publication_status: published
publisher: Elsevier BV
status: public
title: Applicability of molecular statics simulation to partial dislocations in GaAs
type: journal_article
user_id: '77496'
volume: 314-315
year: '2020'
...