{"doi":"10.1016/j.jcrysgro.2022.126756","department":[{"_id":"15"},{"_id":"2"},{"_id":"292"},{"_id":"230"}],"project":[{"_id":"63","name":"TRR 142 - A6: TRR 142 - Subproject A6"}],"publication_status":"published","volume":593,"intvolume":"       593","author":[{"id":"42539","last_name":"Henksmeier","first_name":"Tobias","full_name":"Henksmeier, Tobias"},{"full_name":"Schulz, Johann Friedemann","last_name":"Schulz","first_name":"Johann Friedemann"},{"first_name":"Elias","last_name":"Kluth","full_name":"Kluth, Elias"},{"first_name":"Martin","last_name":"Feneberg","full_name":"Feneberg, Martin"},{"full_name":"Goldhahn, Rüdiger","first_name":"Rüdiger","last_name":"Goldhahn"},{"first_name":"Ana M.","last_name":"Sanchez","full_name":"Sanchez, Ana M."},{"full_name":"Voigt, Markus","first_name":"Markus","last_name":"Voigt","id":"15182"},{"last_name":"Grundmeier","first_name":"Guido","id":"194","full_name":"Grundmeier, Guido"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"}],"status":"public","date_updated":"2023-01-13T16:02:06Z","title":"Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates","user_id":"42539","type":"journal_article","_id":"36804","year":"2022","citation":{"bibtex":"@article{Henksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022, title={Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates}, volume={593}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>}, number={126756}, journal={Journal of Crystal Growth}, publisher={Elsevier}, author={Henksmeier, Tobias and Schulz, Johann Friedemann and Kluth, Elias and Feneberg, Martin and Goldhahn, Rüdiger and Sanchez, Ana M. and Voigt, Markus and Grundmeier, Guido and Reuter, Dirk}, year={2022} }","apa":"Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sanchez, A. M., Voigt, M., Grundmeier, G., &#38; Reuter, D. (2022). Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates. <i>Journal of Crystal Growth</i>, <i>593</i>, Article 126756. <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>","ama":"Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates. <i>Journal of Crystal Growth</i>. 2022;593. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>","mla":"Henksmeier, Tobias, et al. “Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene Covered GaAs(001) Substrates.” <i>Journal of Crystal Growth</i>, vol. 593, 126756, Elsevier, 2022, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>.","chicago":"Henksmeier, Tobias, Johann Friedemann Schulz, Elias Kluth, Martin Feneberg, Rüdiger Goldhahn, Ana M. Sanchez, Markus Voigt, Guido Grundmeier, and Dirk Reuter. “Remote Epitaxy of In(x)Ga(1-x)As(001) on Graphene Covered GaAs(001) Substrates.” <i>Journal of Crystal Growth</i> 593 (2022). <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>.","short":"T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).","ieee":"T. Henksmeier <i>et al.</i>, “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates,” <i>Journal of Crystal Growth</i>, vol. 593, Art. no. 126756, 2022, doi: <a href=\"https://doi.org/10.1016/j.jcrysgro.2022.126756\">10.1016/j.jcrysgro.2022.126756</a>."},"language":[{"iso":"eng"}],"date_created":"2023-01-13T15:40:17Z","publisher":"Elsevier","publication":"Journal of Crystal Growth","article_number":"126756"}