{"issue":"1","doi":"10.1109/16.658845","keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"date_created":"2023-01-24T09:23:56Z","publication":"IEEE Transactions on Electron Devices","_id":"39348","year":"2002","citation":{"bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>.","ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>"},"language":[{"iso":"eng"}],"publication_identifier":{"issn":["0018-9383"]},"date_updated":"2023-03-21T09:45:40Z","type":"journal_article","intvolume":"        45","volume":45,"publication_status":"published","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","title":"Matching analysis of deposition defined 50-nm MOSFET's","user_id":"20179","page":"299-306","author":[{"last_name":"Horstmann","first_name":"J.T.","full_name":"Horstmann, J.T."},{"full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich","last_name":"Hilleringmann"},{"full_name":"Goser, K.F.","last_name":"Goser","first_name":"K.F."}],"status":"public"}