article published J.T. Horstmann author Ulrich Hilleringmann author 20179 K.F. Goser author 59 department Institute of Electrical and Electronics Engineers (IEEE)2002 eng Electrical and Electronic EngineeringElectronicOptical and Magnetic Materials 0018-938310.1109/16.658845 451299-306 Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a> Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>. J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>. @article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} } J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306. Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>. Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a> 393482023-01-24T09:23:56Z2023-03-21T09:45:40Z