{"doi":"10.1557/jmr.2004.0267","_id":"39349","intvolume":"        19","year":"2005","type":"journal_article","page":"1999-2002","issue":"7","publisher":"Springer Science and Business Media LLC","publication_status":"published","abstract":[{"lang":"eng","text":"<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>"}],"publication_identifier":{"issn":["0884-2914","2044-5326"]},"title":"Degradation of organic field-effect transistors made of pentacene","status":"public","user_id":"20179","date_created":"2023-01-24T09:24:41Z","language":[{"iso":"eng"}],"date_updated":"2023-03-22T10:38:56Z","publication":"Journal of Materials Research","department":[{"_id":"59"}],"volume":19,"author":[{"first_name":"Ch.","full_name":"Pannemann, Ch.","last_name":"Pannemann"},{"last_name":"Diekmann","full_name":"Diekmann, T.","first_name":"T."},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"}],"keyword":["Mechanical Engineering","Mechanics of Materials","Condensed Matter Physics","General Materials Science"],"citation":{"mla":"Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>.","short":"Ch. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research 19 (2005) 1999–2002.","apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2005). Degradation of organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>, <i>19</i>(7), 1999–2002. <a href=\"https://doi.org/10.1557/jmr.2004.0267\">https://doi.org/10.1557/jmr.2004.0267</a>","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2005, title={Degradation of organic field-effect transistors made of pentacene}, volume={19}, DOI={<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>}, number={7}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2005}, pages={1999–2002} }","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>. 2005;19(7):1999-2002. doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>","ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Degradation of organic field-effect transistors made of pentacene,” <i>Journal of Materials Research</i>, vol. 19, no. 7, pp. 1999–2002, 2005, doi: <a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>.","chicago":"Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Degradation of Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i> 19, no. 7 (2005): 1999–2002. <a href=\"https://doi.org/10.1557/jmr.2004.0267\">https://doi.org/10.1557/jmr.2004.0267</a>."}}