{"date_updated":"2023-03-22T10:12:01Z","language":[{"iso":"eng"}],"publication":"Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014)","title":"Application of side-wall deposition and etch-back technology for nanometer scale device integration","user_id":"20179","year":"2015","author":[{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","id":"20179","first_name":"Ulrich"},{"full_name":"Vidor, F.F.","last_name":"Vidor","first_name":"F.F."},{"full_name":"Assion, F.","last_name":"Assion","first_name":"F."}],"publication_status":"published","date_created":"2023-01-24T11:37:19Z","doi":"10.1109/scat.2014.7055128","status":"public","_id":"39492","department":[{"_id":"59"}],"type":"conference","publisher":"IEEE","citation":{"ama":"Hilleringmann U, Vidor FF, Assion F. Application of side-wall deposition and etch-back technology for nanometer scale device integration. In: <i>Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014)</i>. IEEE; 2015. doi:<a href=\"https://doi.org/10.1109/scat.2014.7055128\">10.1109/scat.2014.7055128</a>","bibtex":"@inproceedings{Hilleringmann_Vidor_Assion_2015, title={Application of side-wall deposition and etch-back technology for nanometer scale device integration}, DOI={<a href=\"https://doi.org/10.1109/scat.2014.7055128\">10.1109/scat.2014.7055128</a>}, booktitle={Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014)}, publisher={IEEE}, author={Hilleringmann, Ulrich and Vidor, F.F. and Assion, F.}, year={2015} }","ieee":"U. Hilleringmann, F. F. Vidor, and F. Assion, “Application of side-wall deposition and etch-back technology for nanometer scale device integration,” 2015, doi: <a href=\"https://doi.org/10.1109/scat.2014.7055128\">10.1109/scat.2014.7055128</a>.","short":"U. Hilleringmann, F.F. Vidor, F. Assion, in: Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014), IEEE, 2015.","apa":"Hilleringmann, U., Vidor, F. F., &#38; Assion, F. (2015). Application of side-wall deposition and etch-back technology for nanometer scale device integration. <i>Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014)</i>. <a href=\"https://doi.org/10.1109/scat.2014.7055128\">https://doi.org/10.1109/scat.2014.7055128</a>","mla":"Hilleringmann, Ulrich, et al. “Application of Side-Wall Deposition and Etch-Back Technology for Nanometer Scale Device Integration.” <i>Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014)</i>, IEEE, 2015, doi:<a href=\"https://doi.org/10.1109/scat.2014.7055128\">10.1109/scat.2014.7055128</a>.","chicago":"Hilleringmann, Ulrich, F.F. Vidor, and F. Assion. “Application of Side-Wall Deposition and Etch-Back Technology for Nanometer Scale Device Integration.” In <i>Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014)</i>. IEEE, 2015. <a href=\"https://doi.org/10.1109/scat.2014.7055128\">https://doi.org/10.1109/scat.2014.7055128</a>."}}