{"status":"public","date_created":"2023-01-24T11:40:14Z","doi":"10.13052/jmmc2246-137x.131","volume":1,"keyword":["General Medicine"],"type":"journal_article","date_updated":"2023-03-22T10:11:18Z","page":"197-214","_id":"39495","title":"Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology","language":[{"iso":"eng"}],"publisher":"River Publishers","author":[{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"first_name":"F.","last_name":"Assion","full_name":"Assion, F."},{"first_name":"F. F.","full_name":"Vidor, F. F.","last_name":"Vidor"},{"first_name":"G. I.","full_name":"Wirth, G. I.","last_name":"Wirth"}],"user_id":"20179","year":"2015","intvolume":"         1","citation":{"ama":"Hilleringmann U, Assion F, Vidor FF, Wirth GI. Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology. <i>Journal of Machine to Machine Communications</i>. 2015;1(3):197-214. doi:<a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">10.13052/jmmc2246-137x.131</a>","ieee":"U. Hilleringmann, F. Assion, F. F. Vidor, and G. I. Wirth, “Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology,” <i>Journal of Machine to Machine Communications</i>, vol. 1, no. 3, pp. 197–214, 2015, doi: <a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">10.13052/jmmc2246-137x.131</a>.","chicago":"Hilleringmann, Ulrich, F. Assion, F. F. Vidor, and G. I. Wirth. “Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology.” <i>Journal of Machine to Machine Communications</i> 1, no. 3 (2015): 197–214. <a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">https://doi.org/10.13052/jmmc2246-137x.131</a>.","apa":"Hilleringmann, U., Assion, F., Vidor, F. F., &#38; Wirth, G. I. (2015). Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology. <i>Journal of Machine to Machine Communications</i>, <i>1</i>(3), 197–214. <a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">https://doi.org/10.13052/jmmc2246-137x.131</a>","short":"U. Hilleringmann, F. Assion, F.F. Vidor, G.I. Wirth, Journal of Machine to Machine Communications 1 (2015) 197–214.","mla":"Hilleringmann, Ulrich, et al. “Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology.” <i>Journal of Machine to Machine Communications</i>, vol. 1, no. 3, River Publishers, 2015, pp. 197–214, doi:<a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">10.13052/jmmc2246-137x.131</a>.","bibtex":"@article{Hilleringmann_Assion_Vidor_Wirth_2015, title={Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology}, volume={1}, DOI={<a href=\"https://doi.org/10.13052/jmmc2246-137x.131\">10.13052/jmmc2246-137x.131</a>}, number={3}, journal={Journal of Machine to Machine Communications}, publisher={River Publishers}, author={Hilleringmann, Ulrich and Assion, F. and Vidor, F. F. and Wirth, G. I.}, year={2015}, pages={197–214} }"},"publication":"Journal of Machine to Machine Communications","issue":"3","publication_status":"published","publication_identifier":{"issn":["2246-137X"]},"department":[{"_id":"59"}]}