{"publisher":"Elsevier BV","status":"public","author":[{"full_name":"Wolff, K.","first_name":"K.","last_name":"Wolff"},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"}],"page":"110-114","user_id":"20179","title":"Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric","publication_status":"published","volume":62,"citation":{"ama":"Wolff K, Hilleringmann U. Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric. <i>Solid-State Electronics</i>. 2011;62(1):110-114. doi:<a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">10.1016/j.sse.2011.01.046</a>","apa":"Wolff, K., &#38; Hilleringmann, U. (2011). Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric. <i>Solid-State Electronics</i>, <i>62</i>(1), 110–114. <a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">https://doi.org/10.1016/j.sse.2011.01.046</a>","ieee":"K. Wolff and U. Hilleringmann, “Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric,” <i>Solid-State Electronics</i>, vol. 62, no. 1, pp. 110–114, 2011, doi: <a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">10.1016/j.sse.2011.01.046</a>.","short":"K. Wolff, U. Hilleringmann, Solid-State Electronics 62 (2011) 110–114.","chicago":"Wolff, K., and Ulrich Hilleringmann. “Solution Processed Inverter Based on Zinc Oxide Nanoparticle Thin-Film Transistors with Poly(4-Vinylphenol) Gate Dielectric.” <i>Solid-State Electronics</i> 62, no. 1 (2011): 110–14. <a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">https://doi.org/10.1016/j.sse.2011.01.046</a>.","mla":"Wolff, K., and Ulrich Hilleringmann. “Solution Processed Inverter Based on Zinc Oxide Nanoparticle Thin-Film Transistors with Poly(4-Vinylphenol) Gate Dielectric.” <i>Solid-State Electronics</i>, vol. 62, no. 1, Elsevier BV, 2011, pp. 110–14, doi:<a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">10.1016/j.sse.2011.01.046</a>.","bibtex":"@article{Wolff_Hilleringmann_2011, title={Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric}, volume={62}, DOI={<a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">10.1016/j.sse.2011.01.046</a>}, number={1}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wolff, K. and Hilleringmann, Ulrich}, year={2011}, pages={110–114} }"},"publication_identifier":{"issn":["0038-1101"]},"language":[{"iso":"eng"}],"_id":"39527","year":"2011","publication":"Solid-State Electronics","date_created":"2023-01-24T11:57:07Z","intvolume":"        62","type":"journal_article","date_updated":"2023-03-21T10:20:24Z","issue":"1","department":[{"_id":"59"}],"keyword":["Materials Chemistry","Electrical and Electronic Engineering","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"doi":"10.1016/j.sse.2011.01.046"}