{"author":[{"first_name":"Fábio Fedrizzi","last_name":"Vidor","full_name":"Vidor, Fábio Fedrizzi"},{"last_name":"Wirth","full_name":"Wirth, Gilson Inácio","first_name":"Gilson Inácio"},{"full_name":"Wolff, Karsten","last_name":"Wolff","first_name":"Karsten"},{"first_name":"Ulrich","id":"20179","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"}],"keyword":["General Medicine"],"title":"Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors","_id":"39533","language":[{"iso":"eng"}],"publication":"ECS Transactions","intvolume":" 39","user_id":"20179","doi":"10.1149/1.3615183","date_created":"2023-01-24T12:01:16Z","abstract":[{"text":"Due to the electrical, sensory and optical properties the interest on ZnO-based devices including thin-film transistors (TFT) aroused. The main concerns, when using ZnO nanoparticles (NP-ZnO) in TFT, are the low charge carrier mobility and the hysteresis when poly(4-vinylphenol) (PVP) is used as gate dielectric. It is well-known that the mobility in NP-ZnO films can be enhanced by the subsequent hydrothermal decomposition of zinc salts. The electrical behavior as a function of time and temperature is investigated, taking the NP-ZnO without addition of zinc acetate as reference. The addition of zinc acetate leads to a device with better performance, with increased drain current level and without the presence of the hysteresis in the transfer characteristic. The formation reaction was performed at a temperature of 200°C, which enables process compatibility to some plastic substrates.","lang":"eng"}],"publication_identifier":{"issn":["1938-5862","1938-6737"]},"date_updated":"2023-03-21T10:21:23Z","issue":"1","citation":{"chicago":"Vidor, Fábio Fedrizzi, Gilson Inácio Wirth, Karsten Wolff, and Ulrich Hilleringmann. “Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors.” ECS Transactions 39, no. 1 (2011): 109–15. https://doi.org/10.1149/1.3615183.","short":"F.F. Vidor, G.I. Wirth, K. Wolff, U. Hilleringmann, ECS Transactions 39 (2011) 109–115.","ama":"Vidor FF, Wirth GI, Wolff K, Hilleringmann U. Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors. ECS Transactions. 2011;39(1):109-115. doi:10.1149/1.3615183","apa":"Vidor, F. F., Wirth, G. I., Wolff, K., & Hilleringmann, U. (2011). Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors. ECS Transactions, 39(1), 109–115. https://doi.org/10.1149/1.3615183","mla":"Vidor, Fábio Fedrizzi, et al. “Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors.” ECS Transactions, vol. 39, no. 1, The Electrochemical Society, 2011, pp. 109–15, doi:10.1149/1.3615183.","ieee":"F. F. Vidor, G. I. Wirth, K. Wolff, and U. Hilleringmann, “Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors,” ECS Transactions, vol. 39, no. 1, pp. 109–115, 2011, doi: 10.1149/1.3615183.","bibtex":"@article{Vidor_Wirth_Wolff_Hilleringmann_2011, title={Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors}, volume={39}, DOI={10.1149/1.3615183}, number={1}, journal={ECS Transactions}, publisher={The Electrochemical Society}, author={Vidor, Fábio Fedrizzi and Wirth, Gilson Inácio and Wolff, Karsten and Hilleringmann, Ulrich}, year={2011}, pages={109–115} }"},"volume":39,"year":"2011","publisher":"The Electrochemical Society","department":[{"_id":"59"}],"type":"journal_article","status":"public","publication_status":"published","page":"109-115"}