{"department":[{"_id":"286"},{"_id":"292"},{"_id":"15"}],"year":"2017","title":"InAs heteroepitaxy on GaAs patterned by nanosphere lithography","date_updated":"2022-01-06T06:59:59Z","citation":{"ieee":"V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, and J. Lindner, “InAs heteroepitaxy on GaAs patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaw (Poland), 2017.","ama":"Kunnathully V, Riedl T, Karlisch A, Reuter D, Lindner J. InAs heteroepitaxy on GaAs patterned by nanosphere lithography. In: ; 2017.","mla":"Kunnathully, Vinay, et al. <i>InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography</i>. 2017.","short":"V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, J. Lindner, in: 2017.","bibtex":"@inproceedings{Kunnathully_Riedl_Karlisch_Reuter_Lindner_2017, title={InAs heteroepitaxy on GaAs patterned by nanosphere lithography}, author={Kunnathully, Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}, year={2017} }","apa":"Kunnathully, V., Riedl, T., Karlisch, A., Reuter, D., &#38; Lindner, J. (2017). InAs heteroepitaxy on GaAs patterned by nanosphere lithography. Presented at the E-MRS Fall Meeting 2017, Warsaw (Poland).","chicago":"Kunnathully, Vinay, Thomas Riedl, A. Karlisch, Dirk Reuter, and Jörg Lindner. “InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography,” 2017."},"user_id":"55706","date_created":"2018-08-20T13:31:50Z","conference":{"name":"E-MRS Fall Meeting 2017","location":"Warsaw (Poland)","start_date":"2017-09-18","end_date":"2017-09-21"},"status":"public","_id":"3955","author":[{"full_name":"Kunnathully, Vinay","last_name":"Kunnathully","first_name":"Vinay"},{"full_name":"Riedl, Thomas","id":"36950","last_name":"Riedl","first_name":"Thomas"},{"first_name":"A.","full_name":"Karlisch, A.","last_name":"Karlisch"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"first_name":"Jörg","last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg"}],"type":"conference"}