conference paper Vinay Kunnathully author Thomas Riedl author 36950 A. Karlisch author Dirk Reuter author 37763 Jörg Lindner author 20797 286 department 292 department 15 department E-MRS Fall Meeting 2017 2017Warsaw (Poland) V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, and J. Lindner, “InAs heteroepitaxy on GaAs patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaw (Poland), 2017. Kunnathully, V., Riedl, T., Karlisch, A., Reuter, D., &#38; Lindner, J. (2017). InAs heteroepitaxy on GaAs patterned by nanosphere lithography. Presented at the E-MRS Fall Meeting 2017, Warsaw (Poland). Kunnathully, Vinay, Thomas Riedl, A. Karlisch, Dirk Reuter, and Jörg Lindner. “InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography,” 2017. V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, J. Lindner, in: 2017. Kunnathully, Vinay, et al. <i>InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography</i>. 2017. @inproceedings{Kunnathully_Riedl_Karlisch_Reuter_Lindner_2017, title={InAs heteroepitaxy on GaAs patterned by nanosphere lithography}, author={Kunnathully, Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}, year={2017} } Kunnathully V, Riedl T, Karlisch A, Reuter D, Lindner J. InAs heteroepitaxy on GaAs patterned by nanosphere lithography. In: ; 2017. 39552018-08-20T13:31:50Z2022-01-06T06:59:59Z